WINNERJOIN KSA642

RoHS
KSA642
KSA642
D
T
,. L
TRANSISTOR (PNP)
FEATURES
Power dissipation
TO-92
PD:
0.4
W (Tamb=25℃)
1. EMITTER
Collector current
ICM:
-0.3
A
Collector-base voltage
V(BR)CBO:
-30
V
Operating and storage junction temperature range
2. BASE
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
R
T
C
E
L
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage*
E
ICBO
C
3. COLLECTOR
O
1 2 3
unless otherwise specified)
Test
N
conditions
O
MIN
MAX
UNIT
Ic= -100µA , IE=0
-30
V
IC=-10 mA , IB=0
-25
V
IE=-10µA, IC=0
-5
V
VCB=-25V, IE=0
-0.1
µA
IEBO
VCB=-3V, IC=0
-0.1
µA
hFE
VCE=-1 V, IC= -50mA
VCEsat
IC= -0.3A, IB= -30mA
70
400
-0.6
V
* Pulse Test: pw≤350µs, duty cycle≤2%.
CLASSIFICATION OF hFE
J
E
Rank
Range
O
Y
G
70-140
120-240
200-400
W
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