RoHS 2SB1199 2SB1119 SOT-89 TRANSISTOR (PNP) D T ,. L 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 mW (Tamb=25℃) 1 3. EMITTER Collector current ICM: -1 A Collector current (Pulse) ICP: -2 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range 2 O 3 IC TJ,Tstg: -55℃ to +150℃ C N ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol R T Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO O Test conditions MIN TYP MAX UNIT Ic=-10µA, IE=0 -25 V Ic=-1mA, IB=0 -25 V V(BR)EBO IE=-10µA, IC=0 -5 V ICBO VCB=-20V, IE=0 -0.1 µA IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) VCE=-2V, IC=-50mA 100 hFE(2) VCE=-2V, IC=-1A 40 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter saturation voltage VBE(SAT) IC=-500mA, IB=-50mA -1.2 v fT VCE=-10V, IC=-50mA 180 MHz Cob VCB=-10V, f=1MHz 25 pF C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain J E E Transition frequency W Collector output capacitance 560 CLASSIFICATION OF hFE(1) Rank Range R S T U 100-200 140-280 200-400 280-560 Marking WEJ ELECTRONIC CO. BB Http:// www.wej.cn E-mail:[email protected]