RoHS 2SC1008 2SC1008 D T ,. L TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol O IC N unless otherwise specified) R T Parameter C O 1 2 3 Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 8 V ICBO VCB=60 V , IE=0 0.1 µA IEBO VEB= 5 V , 0.1 µA Collector cut-off current C E L E Emitter cut-off current DC current gain J E IC=0 hFE VCE= 2 V, IC=50mA Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50 mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.1 V fT VCE=10V, IC= 50mA W Transition frequency 40 400 30 MHz CLASSIFICATION OF hFE Rank Range R O Y G 40-80 70-140 120-240 200-400 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]