RoHS 2SB764 2SB764 D T ,. L TO-92MOD TRANSISTOR (PNP) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current O Test R T V(BR)CBO 123 unless otherwise specified) Symbol Collector-base breakdown voltage N C O conditions MIN TYP MAX UNIT Ic=-10µA, IE=0 -60 V Ic=-1mA, IB=0 -50 V IE=-10µA, IC=0 -5 V ICBO VCB=-50V, IE=0 -1 µA IEBO VEB=-4V, IC=0 -1 µA hFE(1) VCE=-2V, IC=-50mA 60 hFE(2) VCE=-2V, IC=-1A 30 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter saturation voltage VBE IC=-500mA, IB=-50mA -1.2 V Emitter cut-off current DC current gain J E E Transition frequency Collector output capacitance W sat 320 fT VCE=-10V, IC=-50mA 150 MHz Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. D E F 60-120 100-200 160-320 Http:// www.wej.cn E-mail:[email protected]