RoHS CZT5401 CZT5401 D T ,. L SOT-223 TRANSISTOR (PNP) FEATURES Power dissipation 1. BASE 1 PCM: W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage V V(BR)CBO: -160 Operating and storage junction temperature range IC TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise N conditions O C O specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-10 µ A,IC=0 ICBO VCB=-100V,IE=0 -50 nA IEBO VEB=-3V,IC=0 -50 nA hFE(1) VCE=-5V,IC=-1mA 50 hFE(2) VCE=-5V,IC=-10mA 60 hFE(3) VCE=-5V,IC=-50mA 50 VCE(sat) IC=-10mA,IB=-1mA -0.2 V VCE(sat) IC=-50mA,IB=-5mA -0.5 V VBE(sat) IC=-10mA,IB=-1mA -1 V VBE(sat) IC=-50mA,IB=-5mA -1 V 300 MHz 6 pF 8 dB Collector cut-off current DC current gain E Collector-emitter saturation voltage J E R T C E L Emitter cut-off current Base-emitter voltage W Transition frequency VCE=-10V,IC=-10mA,f=100MHz fT Collector output capacitance Cob Noise figure NF WEJ ELECTRONIC CO. Ic=-100µ A,IE=0 VCB=-10V,IE=0,f=1MHz VCE=-5V,Ic=-0.2mA, f=10Hzto15.7KHZ,Rs=10Ω Http:// www.wej.cn -160 V -150 V -5 V 100 240 E-mail:[email protected]