YEASHIN DB154S

DATA SHEET
DB151S THRU DB157S
SEMICONDUCTOR
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000
Volts CURRENT 1.5 Ampere
SDIP
Unit : inch (mm)
FEATURES
•Surge overload rating - 60 amperes peak
•Ideal for printed circuit board
+
•Reliable low cost construction utilizing molded
.255(6.5)
.245(6.2)
•Glass passivated device
~
•Polarity symbols molded on body
•Mounting position: Any
.011(.28)
~
.410(10.4)
MAX
.045(1.14)
.035(0.89)
•Weight: 1.0 gram
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
.060(1.524)
.040(1.106)
.335(8.51)
.335(8.05)
environment substance directive request
.128(3.25)
.102 (2.60)
MECHANICAL DATA
•Epoxy : Device has UL flammability classification 94V-0
.205(5.2)
.195(5.0)
•UL listed the recognized component directory, file #E94233
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings at 25 oC ambient temperature unless otherwise specified.
•Single phase, half wave, 60 Hz, resistive or inductive load.
•For capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
SYMBOL DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
Volts
VDC
50
100
200
400
600
800
1000
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40
℃
Volts
IO
1.5
Amps
IFSM
60
Amps
RqJA
40
RqJL
15
TJ,TSTG
-55 to + 150
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load (JEDEC method)
Typical thermal resistance
Operating and Storage Temperature Range
℃/W
℃
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
SYMBOL DB151S DB152S DB153S DB154S DB155S DB156S DB157S
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per
@TA = 25℃
Bridge
@TA = 125℃
VF
IR
DC Blocking Voltage per element
UNITS
1.1
Volts
5.0
uAmps
0.5
uAmps
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
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REV.03 20130115
DEVICE CHARACTERISTICS
INSTANTANEOUS FWD CUTTENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
DB151S THRU DB157S
3.0
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
T J =25 OC
Pulse Width = 200uS
O
AMBIENT TEMPERATURE, C
INSTANTANEOUS FWD VOLTAGE, VOLTS
FIG.2 TYPICAL FORWARD CHARACTERISTICS
10
FORWARD SURGE CURRENT, AMPERES
(HALF SINE-WAVE)
INSTANTANEOUS REVERSE CURRENT,uA
FIG.1 DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
O
TA = 100 C
1.0
0.1
O
TA= 25 C
0.01
0
20
40
60
80
100
120
140
40
30
20
10
0
1
2
6
10
20
40
60
100
NO. OF CYCLES AT 60Hz
PERCENT OF PEAK REVERSE VOLTAGE, %
FIG.3 TYPICAL REVERSE CHARACTERISTICS
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50
FIG.4 MAX NON-REPETITIVE SURGE CURRENT
2
REV.03 20130115