ETC UPG186TQ

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG186TQ
GaAs MMIC DBS SPDT IF SWITCH
DESCRIPTION
The µPG186TQ is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block
(LNB) down-converter for systems where at least multi LNB are required.
FEATURES
• High isolation
: ISL = 45 dB TYP. (D/U-ratio)
• Control voltage
: Vcont = 0 V/+5 V
• Insertion loss
: LINS = 1.5 dB TYP. (ZO = 50 Ω)
• 10-pin plastic TSON package (2.4 × 2.55 × 0.6 mm)
ORDERING INFORMATION
Part Number
µPG186TQ-E1
Package
10-pin plastic TSON
Marking
186
Supplying Form
• Embossed tape 12 mm wide
• Pin 5, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG186TQ
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10137EJ02V0DS (2nd edition)
Date Published June 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 2001, 2002
µPG186TQ
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Top View
10
9
8
7
Top View
6
10
9
8
7
Bottom View
6
6
186
1
2
3
4
7
8
9
1
2
3
4
5
5
4
3
Pin Name
1
IN-A
2
GND
3
GND
4
GND
5
IN-B
6
Vcont2
7
GND
8
OUT
9
GND
10
Vcont1
10
GND
5
Pin No.
2
1
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified)
Parameter
Control Voltage
Symbol
Ratings
Unit
Vcont
−1.0 to +6.0
V
Note
Total Power Dissipation
Ptot
2
Input Power
Pin
+10
dBm
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−65 to +150
°C
W
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Control Voltage (High)
Vcont(H)
+4.5
+5.0
+5.5
V
Control Voltage (Low)
Vcont(L)
−0.5
0
+0.5
V
2
Data Sheet PG10137EJ02V0DS
µPG186TQ
ELECTRICAL CHARACTERISTICS
(TA = +25°°C, Vcont = 0 V/+5 V, Pin = 0 dBm, ZO = 50 Ω, Each Port, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
LINS
f = 0.95 to 2.15 GHz
−
1.5
2.5
dB
Insertion Loss Flatness 1
∆LINS1
f = 0.95 to 1.5 GHz
−
0.4
1.0
dB
Insertion Loss Flatness 2
Insertion Loss
∆LINS2
f = 1.5 to 2.15 GHz
−
0.5
1.2
dB
Isolation D/U-ratio 1
Note1
ISL1
f = 0.95 to 1.5 GHz
45
48
−
dB
Isolation D/U-ratio 2
Note1
ISL2
f = 1.5 to 2.15 GHz
42
45
−
dB
RLOUT
f = 0.95 to 2.15 GHz
10
15
−
dB
Vcont = +5 V/0 V, RF OFF
−
−
200
µA
Output Return Loss
Control Current
Note2
Icont
Notes 1. ‘Isolation D/U-ratio’ = ‘signal leakage (off-state)’ − ‘insertion loss (on-state)’
2. per 1 control pin
TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE
Vcont1
Vcont2
IN-A−OUT
IN-B−OUT
High
Low
ON
OFF
Low
High
OFF
ON
Data Sheet PG10137EJ02V0DS
3
µPG186TQ
TYPICAL CHARACTERISTICS (TA = +25°°C, Vcont = 0 V/+5 V, Pin = 0 dBm, ZO = 50 Ω, Each Port)
SIGNAL LEAKAGE vs. FREQUENCY
INSERTION LOSS vs. FREQUENCY
0
0
–2
2
–20
3
–4
–6
1: 0.95 GHz
–1.29 dB
2: 1.5 GHz
–1.33 dB
3: 2.15 GHz
–1.37 dB
–8
–10
0
0.5
1.0
1.5
2.0
2.5
Signal Leakage (dB)
Insertion Loss LINS (dB)
1
–40
1
2
–60
–80
–100
0
3.0
0.5
INPUT RETURN LOSS (ON ROUTE)
vs. FREQUENCY
2.5
3.0
0
–10
1
–20
3
2
–30
1: 0.95 GHz
–18.3 dB
2: 1.5 GHz
–18.4 dB
3: 2.15 GHz
–17.9 dB
–40
–50
0
0.5
1.0
1.5
2.0
2.5
Output Return Loss RLOUT (dB)
Input Return Loss RLIN (dB)
2.0
OUTPUT RETURN LOSS (ON ROUTE)
vs. FREQUENCY
0
–10
1
–20
2
3
–30
1: 0.95 GHz
–18.6 dB
2: 1.5 GHz
–20.5 dB
3: 2.15 GHz
–23.3 dB
–40
–50
0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency f (GHz)
Frequency f (GHz)
INPUT RETURN LOSS (OFF ROUTE)
vs. FREQUENCY
OUTPUT RETURN LOSS (OFF ROUTE)
vs. FREQUENCY
0
1
–10
2
3
–20
–30
1: 0.95 GHz
–8.00 dB
2: 1.5 GHz
–10.2 dB
3: 2.15 GHz
–12.0 dB
–40
–50
0
0.5
1.0
1.5
2.0
2.5
3.0
Output Return Loss RLOUT (dB)
0
Input Return Loss RLIN (dB)
1.5
Frequency f (GHz)
Frequency f (GHz)
–10
1
–20
2
3
–30
1: 0.95 GHz
–18.4 dB
2: 1.5 GHz
–19.6 dB
3: 2.15 GHz
–22.8 dB
–40
–50
0
Frequency f (GHz)
0.5
1.0
1.5
2.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
4
1.0
3
1: 0.95 GHz
–52.0 dB
2: 1.5 GHz
–50.5 dB
3: 2.15 GHz
–50.6 dB
Data Sheet PG10137EJ02V0DS
2.5
3.0
µPG186TQ
PACKAGE DIMENSIONS
10-PIN PLASTIC TSON (UNIT: mm)
0.18±0.05
(0.3)
2.20±0.1
(0.95)
(Bottom View)
(1.95)
2.25±0.1
2.55±0.15
0.40±0.05
(1.70)
(0.35)
(0.125)
(0.6 MAX.)
2.40±0.15
Remark ( ): Reference value
Data Sheet PG10137EJ02V0DS
5
µPG186TQ
CIRCUIT DIAGRAM AS 2×
×2 SWITCH MATRIX (REFERENCE ONLY)
µ PG186TQ
C
R
R
IN-A
C
OUT1
R
R
OUT2
C
IN-B
C
R
R
µ PG186TQ
C: 56 pF
R: 20 Ω
6
Data Sheet PG10137EJ02V0DS
µPG186TQ
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10137EJ02V0DS
7
µPG186TQ
• The information in this document is current as of June 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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and industrial robots
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
8
Data Sheet PG10137EJ02V0DS
µPG186TQ
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
FAX: +852-3107-7309
TEL: +852-3107-7303
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
FAX: +82-2-528-0302
TEL: +82-2-528-0301
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0110