NTGS3446 Power MOSFET 5 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com 5 AMPERES 20 VOLTS RDS(on) = 45 m Applications • Power Management in portable and battery–powered products, i.e. • • N–Channel computers, printers, PCMCIA cards, cellular and cordless Lithium Ion Battery Applications Note Book PC 1 2 5 6 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Gate–Source Voltage – Continuous Symbol Value Unit VDSS VGS 20 Vdc Drain – Continuous – Continuous @ 70°C – Single Pulse (tp10 µs) Operating and Storage Temperature Range Vdc 5.8 TBD 20 Adc 1.6 Watts TJ, Tstg –55 to 150 °C EAS TBD mJ Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, IL = 5.8 A, L = TBD mH, RG = 25 Ω) Thermal Resistance Junction–to–Ambient (Note 1.) Steady State Junction–to–Ambient (Note 2.) Junction–to–Lead Steady State 4 20 ID ID IDM PD Total Power Dissipation 3 MARKING DIAGRAM 3 4 °C/W RθJA RθJA RθJL 5 2 1 446 W TSOP–6 CASE 318G STYLE 1 6 W TBD TBD TBD = Work Week PIN ASSIGNMENT Drain Drain Source 1. When surface mounted to Min Pad. 2. When surface mounted to 1″ x 1″ FR4 Board. 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3446T1 Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 1 1 Package TSOP–6 Shipping 3000 Tape & Reel Publication Order Number: NTGS3446/D NTGS3446 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 20 – – TBD – – – – – – 1.0 25 – – – – 100 100 0.6 – 0.9 TBD 1.2 – – – 36 44 45 55 gFS 10 17 – mhos Ciss – 930 TBD pF Coss – 370 TBD Crss – 105 TBD td(on) – 8.6 TBD tr – 14 TBD td(off) – 57 TBD tf – 54 TBD QT – 11 15 Q1 – 2.4 – Q2 – 2.4 – – – 0.74 TBD 1.1 – trr – 30 – ta – 14.5 – tb – 15.5 – QRR – 0.01 – OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Collector Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C) Vdc µAdc IDSS Gate–Body Leakage Current (VGS = ±12 Vdc, VDS = 0) IGSS(f) IGSS(r) mV/°C nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage ID = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 5.3 Adc) (VGS = 2.5 Vdc, ID = 4.4 Adc) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 5.3 Adc) Vdc mV/°C m DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 10 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4 4.5 5 Vdc Vdc, RL = 10 RG = 6.0 Ω) Fall Time Gate Charge (VDS = 10 Vdc, Vd ID = 5.8 5 8 Adc, Ad VGS = 4.5 Vdc) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS VSD Forward On–Voltage (Note 1.) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C) Reverse Recovery Time (IS = 1.7 1 7 Adc, Adc VGS = 0 Vdc, Vdc diS/dt = 100 A/µs) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns µC NTGS3446 PACKAGE DIMENSIONS TSOP–6 CASE 318G–02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. http://onsemi.com 3 DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NTGS3446 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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