VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 240 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 mAdc Pulsed Drain Current IDM 500 mAdc Power Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C TJ, Tstg – °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 312.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds TL 300 °C Continuous Drain Current Operating and Storage Temperature 200 mAMPS 240 VOLTS RDS(on) = 6 Ω N–Channel D G S THERMAL CHARACTERISTICS TO–92 CASE 29 Style 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT VN2406L YWW 1 Source 3 Drain 2 Gate Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping VN2406L TO–92 1000 Units/Box VN2406LZL1 TO–92 2000 Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 3 1 Publication Order Number: VN2406L/D VN2406L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 240 – Vdc – – 10 500 STATIC CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µA) µAdc Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125°C) IDSS Gate– Body Leakage (VDS = 0, VGS = ±15 V) IGSS – ±100 nAdc VGS(th) 0.8 2.0 Vdc ID(on) 1.0 – Adc – – 10 6.0 gfs 300 – mS Ciss – 125 pF Coss – 50 pF Crss – 20 pF t(on) – 8.0 ns t(r) – 8.0 ns t(off) – 23 ns t(f) – 34 ns Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On–State Drain Current (Note 1) (VGS = 10 V, VDS ≥ 2.0 VDS(on)) Drain–Source On Resistance (Note 1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Ω rDS(on) Forward Transconductance (Note 1) (VDS = 10 V, ID = 0.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn–On Time (VDD = 60 Vdc, Vd ID = 0.4 0 4 A, A RL = 150 Ω, RG = 25 Ω) Turn–Off Time 1. Pulse Test; Pulse Width < 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 VN2406L VN2406 PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- VN2406L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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