SM7501NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 75V/80A, G RDS(ON)=9mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications G • Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM7501N Assembly Material Handling Code Temperature Range Package Code SM7501N F : XXXXX - Date Code SM7501N XXXXX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 1 www.sinopowersemi.com SM7501NF Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 40 A TC=25°C 300* A TC=25°C 80 TC=100°C 75 TC=25°C 273 TC=100°C 136 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case A W 0.55 °C/W 1 J Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=2mH Note：*Pulse width limited by safe operating area. Electrical Characteristics Symbol (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions SM7501NF Min. Typ. Max. 75 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250µA VDS=60V, VGS=0V TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=40A - 9 11 mΩ ISD=20A, VGS=0V - 0.8 1.1 V - 55 - ns - 117 - nC Diode Characteristics a VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 IDS=40A, dlSD/dt=100A/µs 2 www.sinopowersemi.com SM7501NF Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Test Conditions SM7501NF Min. Typ. Max. - 1.5 - - 3450 - - 470 - - 190 - - 23 42 - 12 23 - 77 140 - 69 125 - 70 98 - 19 - - 22 - Unit b RG Tf (TA = 25°C Unless Otherwise Noted) Ω pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=40A nC Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 3 www.sinopowersemi.com SM7501NF Typical Operating Characteristics Drain Current Power Dissipation 100 300 80 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 60 40 20 50 o TC=25 C 0 0 o 0 20 40 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 600 2 1 ID - Drain Current (A) 100 Normalized Effective Transient Rd s(o n) Lim it 1ms 10ms 100ms 1s 10 DC 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RθJA :0.55 C/W o TC=25 C 0.1 0.1 1 10 1E-3 1E-4 100 300 VDS - Drain - Source Voltage (V) Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM7501NF Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 180 13 VGS= 8,9,10V 160 12 RDS(ON) - On - Resistance (mΩ) 7V ID - Drain Current (A) 140 120 6.5V 100 80 6V 60 40 5.5V 20 5V 0 4.5V 0 1 2 3 4 11 10 VGS=10V 9 8 7 6 5 5 0 20 40 80 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 20 1.6 Normalized Threshold Vlotage 18 16 14 12 10 8 6 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 100 IDS =250µA IDS=40A RDS(ON) - On - Resistance (mΩ) 60 5 www.sinopowersemi.com SM7501NF Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 180 2.0 VGS = 10V 100 IDS = 40A 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=175 C 10 o Tj=25 C 1 0.4 o RON@Tj=25 C: 9mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 175 0.9 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.5 10 Frequency=1MHz VDS= 30V 9 VGS - Gate-source Voltage (V) 4500 4000 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 5000 Ciss 3500 3000 2500 2000 1500 1000 Coss 500 0 0.3 5 7 6 5 4 3 2 1 Crss 0 IDS= 40A 8 10 15 20 25 0 30 VDS - Drain - Source Voltage (V) Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 0 10 20 30 40 50 60 70 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM7501NF Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD VDS 90% DUT RG VGS VDD 10% VGS tp td(on) tr Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 7 td(off) tf www.sinopowersemi.com SM7501NF Package Information TO-220 E A E2 A1 E1 H1 Q E/2 L L1 D1 D D2 P b e A2 c b2 S Y M B O L A MIN. 3.56 MAX. 4.83 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 TO-220 MILLIMETERS INCHES MIN. 0.140 MAX. 0.190 b 0.38 1.02 0.015 0.040 b2 1.14 1.78 0.045 0.070 c D 0.36 0.61 0.014 0.024 14.22 8.38 16.51 0.560 0.650 D1 0.330 0.355 D2 12.19 9.02 12.88 0.480 0.507 E 9.65 10.67 0.380 0.420 E1 6.86 8.89 0.270 0.350 0.030 0.76 E2 e 2.54 BSC 0.100 BSC H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580 0.250 6.35 L1 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB. Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 8 www.sinopowersemi.com SM7501NF Devices Per Unit Package Type Unit Quantity TO-220 Tube 50 Classification Profile Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 9 www.sinopowersemi.com SM7501NF Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 °C ≥2.5 mm Volume mm ≥350 220 °C 220 °C 3 220 °C Table 2. Pb-free Process – Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm – 2.5 mm ≥2.5 mm Volume mm <350 260 °C 260 °C 250 °C 3 3 Volume mm 350-2000 260 °C 250 °C 245 °C Volume mm >2000 260 °C 245 °C 245 °C 3 Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 Description 5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C Customer Service Sinopower Semiconductor, Inc. 7F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - May., 2009 10 www.sinopowersemi.com