SAMES SM7501NF

SM7501NF
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
SD
75V/80A,
G
RDS(ON)=9mΩ (typ.) @ VGS=10V
•
•
•
Avalanche Rated
Reliable and Rugged
Top View of TO-220
Lead Free and Green Devices Available
(RoHS Compliant)
D
Applications
G
•
Power Management for Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
SM7501N
Assembly Material
Handling Code
Temperature Range
Package Code
SM7501N F :
XXXXX - Date Code
SM7501N
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
1
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SM7501NF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
75
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
40
A
TC=25°C
300*
A
TC=25°C
80
TC=100°C
75
TC=25°C
273
TC=100°C
136
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
A
W
0.55
°C/W
1
J
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
L=2mH
Note:*Pulse width limited by safe operating area.
Electrical Characteristics
Symbol
(TA = 25°C Unless Otherwise Noted)
Parameter
Test Conditions
SM7501NF
Min.
Typ.
Max.
75
-
-
-
-
1
-
-
30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VGS=0V, IDS=250µA
VDS=60V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=250µA
2
3
4
V
Gate Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
Drain-Source On-state Resistance
VGS=10V, IDS=40A
-
9
11
mΩ
ISD=20A, VGS=0V
-
0.8
1.1
V
-
55
-
ns
-
117
-
nC
Diode Characteristics
a
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
IDS=40A, dlSD/dt=100A/µs
2
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SM7501NF
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Test Conditions
SM7501NF
Min.
Typ.
Max.
-
1.5
-
-
3450
-
-
470
-
-
190
-
-
23
42
-
12
23
-
77
140
-
69
125
-
70
98
-
19
-
-
22
-
Unit
b
RG
Tf
(TA = 25°C Unless Otherwise Noted)
Ω
pF
ns
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=40A
nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
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SM7501NF
Typical Operating Characteristics
Drain Current
Power Dissipation
100
300
80
ID - Drain Current (A)
Ptot - Power (W)
250
200
150
100
60
40
20
50
o
TC=25 C
0
0
o
0
20 40 60 80 100 120 140 160 180 200
TC=25 C,VG=10V
0
20 40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
600
2
1
ID - Drain Current (A)
100
Normalized Effective Transient
Rd
s(o
n)
Lim
it
1ms
10ms
100ms
1s
10
DC
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
Mounted on 1in pad
o
RθJA :0.55 C/W
o
TC=25 C
0.1
0.1
1
10
1E-3
1E-4
100 300
VDS - Drain - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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SM7501NF
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
180
13
VGS= 8,9,10V
160
12
RDS(ON) - On - Resistance (mΩ)
7V
ID - Drain Current (A)
140
120
6.5V
100
80
6V
60
40
5.5V
20
5V
0
4.5V
0
1
2
3
4
11
10
VGS=10V
9
8
7
6
5
5
0
20
40
80
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
20
1.6
Normalized Threshold Vlotage
18
16
14
12
10
8
6
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150 175
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
100
IDS =250µA
IDS=40A
RDS(ON) - On - Resistance (mΩ)
60
5
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SM7501NF
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
180
2.0
VGS = 10V
100
IDS = 40A
1.6
IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
o
Tj=175 C
10
o
Tj=25 C
1
0.4
o
[email protected]=25 C: 9mΩ
0.2
-50 -25
0
25
50
0.1
0.0
75 100 125 150 175
0.9
1.2
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
1.5
10
Frequency=1MHz
VDS= 30V
9
VGS - Gate-source Voltage (V)
4500
4000
C - Capacitance (pF)
0.6
Tj - Junction Temperature (°C)
5000
Ciss
3500
3000
2500
2000
1500
1000
Coss
500
0
0.3
5
7
6
5
4
3
2
1
Crss
0
IDS= 40A
8
10
15
20
25
0
30
VDS - Drain - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
0
10
20
30
40
50
60
70
QG - Gate Charge (nC)
6
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SM7501NF
Avalanche Test Circuit and Waveforms
VDS
L
tp
VDSX(SUS)
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Avalanche Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
RG
VGS
VDD
10%
VGS
tp
td(on) tr
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
7
td(off) tf
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SM7501NF
Package Information
TO-220
E
A
E2
A1
E1
H1
Q
E/2
L
L1
D1
D
D2
P
b
e
A2
c
b2
S
Y
M
B
O
L
A
MIN.
3.56
MAX.
4.83
A1
0.51
1.40
0.020
0.055
A2
2.03
2.92
0.080
0.115
TO-220
MILLIMETERS
INCHES
MIN.
0.140
MAX.
0.190
b
0.38
1.02
0.015
0.040
b2
1.14
1.78
0.045
0.070
c
D
0.36
0.61
0.014
0.024
14.22
8.38
16.51
0.560
0.650
D1
0.330
0.355
D2
12.19
9.02
12.88
0.480
0.507
E
9.65
10.67
0.380
0.420
E1
6.86
8.89
0.270
0.350
0.030
0.76
E2
e
2.54 BSC
0.100 BSC
H1
5.84
6.86
0.230
0.270
L
12.70
14.73
0.500
0.580
0.250
6.35
L1
P
3.53
4.09
0.139
0.161
Q
2.54
3.43
0.100
0.135
Note: Follow JEDEC TO-220 AB.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
8
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SM7501NF
Devices Per Unit
Package Type
Unit
Quantity
TO-220
Tube
50
Classification Profile
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
9
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SM7501NF
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Volume mm
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
Volume mm
≥350
220 °C
220 °C
3
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
3
Volume mm
350-2000
260 °C
250 °C
245 °C
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
7F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050
Copyright  Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
10
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