BAS 70-08S Silicon Schottky Diode Array General-purpose diode for high-speed switching 4 Circuit protection 5 6 Voltage clamping High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604 W1s 123 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling 1 2 3 A1 A2 A3 EHA07193 EHA07291 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Pin Configuration Package BAS 70-08S 78s 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t 10ms) IFSM 100 Total power dissipation, TS 40°C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA 575 RthJS 435 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu 1 Oct-07-1999 BAS 70-08S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 70 - - DC characteristics Breakdown voltage V(BR) V I(BR) = 10 µA Reverse current µA IR VR = 50 V - - 0.1 VR = 70 V - - 10 Forward voltage mV VF IF = 1 mA - 375 410 IF = 10 mA - 705 750 IF = 15 mA - 880 1000 CT - 1.6 2 pF - - 100 ps RF - 30 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Forward resistance IF = 10 mA, f = 100 MHz 2 Oct-07-1999 BAS 70-08S Forward current IF = f (VF ) Reverse current IR = f (VR) TA = Parameter TA = Parameter 10 2 ΙF BAS 70W/BAS 170W EHB00042 10 2 mA 10 ΙR BAS 70W/BAS 170W EHB00043 µA TA = 150 C 10 1 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.5 1.0 V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR) Differential forward resistance rf = f (IF) f = 1MHz f = 10 kHz 2.0 CT BAS 70W/BAS 170W EHB00044 10 3 pF rf BAS 70W/BAS 170W EHB00045 Ω 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 1 10 mA 100 ΙF VR 3 Oct-07-1999