BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BAS 170W 7 Q62702-A1072 Pin Configuration Package 1 2 A C 1) SOD-323 Maximum Ratings Parameter Symbol Reverse voltage VR IF IFSM Ptot Top Tstg Forward current Surge forward current, t ≤ 10 ms Total Power dissipation TS ≤ 97°C Operating temperature range Storage temperature range BAS 170W Unit 70 V 70 mA 100 mA 250 mW -55 +150°C °C -55...+150°C °C Thermal Resistance Junction-ambient 1) Rth JA Rth JS Junction-soldering point ≤ 320 K/W ≤ 210 K/W _________________________________ 1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu Semiconductor Group 1 Edition A01, 11.07.94 BAS 170W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 70 - - 300 600 750 375 705 880 410 750 1000 DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V V(BR) VF mV µA IR - VR = 70 V Diode capacitance VR = 0 V, f = 1 MHz CT Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance I Semiconductor Group V - 0.1 10 pF - 1.5 2 ps - - 100 Ω RF - 34 - - 2 - LS 2 nH Edition A01, 11.07.94 BAS 170W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 Edition A01, 11.07.94 BAS 170W Forward current IF = f (TA *TS) Permissible load RthJS = f (tp) mA K/W * Package mounted on epoxy TS IF R thJS TA TS TA tp Permissible Pulse load IFmax / IFDC= f (tp) I Fmax _____ I FDC tp Semiconductor Group 4 Edition A01, 11.07.94