BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection 6 • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 Type Marking Ordering Code Pin Configuration BAS 70-06S 76s 1/4=C1 Q62702-A3469 2/5=C2 3 VPS05604 Package 3/6=A1/A2SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t< 100µs) IFSM 100 Total power dissipation, T S ≤ 72 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top - 55 ...+150 Storage temperature Tstg - 55 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 545 RthJS ≤ 310 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAS 70-06S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 10 µA Reverse current µA IR VR = 50 V - - 0.1 VR = 70 V - - 10 Forward voltage mV VF I F = 1 mA 300 375 410 I F = 10 mA 600 705 750 I F = 15 mA 750 880 1000 CT - 1.6 2 pF τ - - 100 ps rf - 30 - Ω AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance I F = 10 mA, f = 100 MHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAS 70-06S Forward current IF = f (TA*;TS) * Package mounted on epoxy 100 IF mA TS 60 TA 40 20 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-07-1998 1998-11-01 BAS 70-06S Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter TA = Parameter 10 2 ΙF BAS 70W/BAS 170W EHB00042 10 2 mA ΙR BAS 70W/BAS 170W EHB00043 µA TA = 150 C 10 1 10 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.5 1.0 V 10 -3 1.5 0 20 40 60 Diode capacitance CT = f (V R) f = 1MHz CT 80 VR VF 2.0 V Differential forward resistance rf = f (IF) f = 10 kHz BAS 70W/BAS 170W EHB00044 10 3 pF rf BAS 70W/BAS 170W EHB00045 Ω 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 Semiconductor Group Semiconductor Group 1 10 mA 100 ΙF VR 44 Sep-07-1998 1998-11-01