BAS 70W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detection and mixing Type Ordering Code (tape and reel) Pin Configuration 1 2 3 BAS 70-04W BAS 70-05W BAS 70-06W Q62702-A1068 Q62702-A1069 Q62702-A1070 A1 A1 C1 C2 A2 C2 Marking C1/A2 74s C1/C2 75s A1/A2 76s Package1) SOT-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 70 mA Surge forward current, t ≤ 10 ms IFSM 100 mA Total power dissipation TS ≤ 91 °C Ptot 250 mW Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Junction-ambient1) Rth JA ≤ 455 K/W Junction-soldering point Rth JS ≤ 235 K/W Thermal Resistance 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 10.94 BAS 70W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 70 – – DC Characteristics Breakdown voltage I(BR) = 10 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF Reverse current VR = 50 V VR = 70 V IR Diode capacitance CT V mV 300 600 750 τ Differential forward resistance IF = 10 mA, f = 10 kHz rf Series inductance LS Semiconductor Group 410 750 1000 µA – – – – 0.1 10 – 1.5 2 pF VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA 375 705 880 ps – – 100 Ω 2 – 34 – – 2 – nH BAS 70W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 70W Permissible Pulse load IF = f (TA; TS*) * Package mounted on epoxy Permissible load RthJS = f (tp) Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group 4