BAS 140W Silicon Schottky Diode ● ● ● ● General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Pin Configuration 1 2 Marking Package BAS 140W Q62702-A1071 A 4 SOD-323 C Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 120 mA Surge forward current, t ≤ 10 ms IFSM 200 mA Total power dissipation TS ≤ 113 °C Ptot 250 mW Operating temperature range Top – 55 … + 125 °C Storage temperature range Tstg – 55 … + 150 °C Junction-ambient1) Rth JA ≤ 260 K/W Junction-soldering point Rth JS ≤ 150 K/W Thermal Resistance 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 05.95 BAS 140W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Breakdown voltage I(BR) = 10 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF Reverse current VR = 30 V VR = 40 V IR Diode capacitance CT V 40 Series inductance LS Semiconductor Group 310 450 720 380 500 1000 µA – – – – 1 10 – 3 5 pF VR = 0 V, f = 1 MHz RF – mV 250 350 600 Differential forward resistance IF = 10 mA, f = 10 kHz – Ω 2 – 10 – – 2 – nH BAS 140W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 140W Forward current IF = f (TA*, TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load IFmax / IFDC = f (tp) Semiconductor Group 4