DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES ■ Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V 600A 1200A APPLICATIONS ■ Motor Drives ■ Wind Turbines ■ UPS Systems 1(C) 2(E) 5(E1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS12-E000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. 3(G1) 4(C1) Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM600BSS12-E000 Note: When ordering, please use the complete part number. Outline type code: B (See package details for further information) Fig. 2 Module Outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM600BSS12-E000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 80˚C 600 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 1200 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 2.75 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 45 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2.5 kV QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 pC IC I2t 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-E000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Al2O3 Cu 20mm Thermal resistance - transistor 425 Test Conditions Parameter Symbol Rth(j-c) Clearance: 11mm CTI (Critical Tracking Index): Continuous dissipation - Min. Typ. Max. Units - - 45 ˚C/kW - - 80 ˚C/kW - - 15 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C 3 - 5 Nm Electrical connections - M6 2.5 - 5 Nm Electrical connections - M6 1.1 2 Nm - Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM600BSS12-E000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 5 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC = 24mA, VGE = VCE 5.0 5.8 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 600A - 1.7 2.15 V VGE = 15V, IC = 600A, , Tcase = 125˚C - 2.0 2.5 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 600 A IFM Diode maximum forward current tp = 1ms - - 1200 A VF Diode forward voltage IF = 600A - 1.65 2.15 V IF = 600A, Tcase = 125˚C - 1.65 2.15 V VCE = 25V, VGE = 0V, f = 1MHz - 42 - nF Cies Input capacitance LM Module inductance - per arm - - 20 - nH RINT Internal transistor resistance - - 0.23 - mΩ SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 2400 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - - - A IEC 60747-9 Note: * L is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-E000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 600A - 550 - ns Fall time VGE = ±15V - 100 - ns EOFF Turn-off energy loss VCE = 600V - 62 - mJ td(on) Turn-on delay time RG(ON) = 3.6Ω - 200 - ns Rise time RG(OFF) = 1.8Ω - 120 - ns L ~ 70nH - 60 - mJ - 6 - µC IF = 600A, VR = 600V, - 45 - µC dIF/dt = 4800A/µs - 360 - A - 18 - mJ Test Conditions Min. Typ. Max. Units IC = 600A - 700 - ns Fall time VGE = ±15V - 150 - ns EOFF Turn-off energy loss VCE = 600V - 95 - mJ td(on) Turn-on delay time RG(ON) = 3.6Ω - 250 - ns Rise time RG(OFF) = 1.8Ω - 120 - ns L ~ 70nH - 80 - mJ IF = 600A, VR = 600V, - 90 - µC dIF/dt = 4400A/µs - 440 - A - 36 - mJ Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qg Gate charge Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Note: Switching Characteristic measurements taken using standard driver circuit conditions. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM600BSS12-E000 TYPICAL CHARACTERISTICS 1200 1200 Common emitter 1100 Tcase = 25°C 1000 900 900 800 Collector current, IC - (A) Collector current, IC - (A) 1000 700 600 500 400 300 800 700 600 500 400 300 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 100 0 0.0 Common emitter Tcase = 125°C 1100 0.5 1.0 1.5 2.0 2.5 3.0 Collector voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 100 0 4.0 0 Fig. 3 Typical output characteristics 1.0 1.5 2.0 2.5 3.0 3.5 Collector voltage, Vce - (V) 4.0 4.5 5.0 Fig. 4 Typical output characteristics 210 300 Conditions: Tcase = 125ºC Rg(on) = 3.6 ohms 180 Rg(off) = 1.2 ohms Vcc = 600V Eon Conditions: Tcase = 125ºC 270 IC = 600A Vcc = 600V Eoff Erec 120 Eon Eoff 90 Erec 60 Switching energy, Esw - (mJ) 240 150 Switching energy, Esw - (mJ) 0.5 210 180 150 120 90 60 30 30 0 0 300 600 900 Collector current, IC - (A) 1200 Fig. 5 Typical switching energy vs collector current 6/9 0 5 10 Gate resistance, Rg - (ohms) 15 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-E000 1400 1200 Tj = 125˚C Tj = 25˚C 1200 1000 Collector current, IC - (A) Forward current, IF - (A) 1000 800 600 400 800 600 400 Tcase = 125˚C Vge = ±15V 200 R = 1.2 Ohms g 200 0 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics 200 1000 Tj = 125˚C Transient thermal impedance, Zth(j-c) - (°C/kW) 600 500 400 300 200 IGBT Diode 10 IGBT Diode 200 400 600 800 1000 Reverse voltage, VR - (V) 1200 Fig. 9 Diode reverse bias safe operating area 1400 1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.6626 0.0366 1.6697 0.0518 0.1 Time - (s) 2 5.7405 1.2397 13.4278 1.6595 3 23.0059 38.1633 47.4367 37.3209 1 4 15.5853 118.8096 17.2352 170.5037 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1400 100 100 0 0 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) Fig. 8 IGBT reverse bias safe operating area 700 Reverse recovery current, Irr - (A) Module IC Chip IC 7/9 DIM600BSS12-E000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2(E) 1(C) 5(E1) 3(G1) 4(C1) Nominal weight: 475g Module outline type code: B Fig. 11 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. 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