NLSF302 Quad 2−Input NOR Gate The NLSF302 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28% VCC • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Designed for 2 V to 5.5 V Operating Range • Low Noise: VOLP = 0.8 V (Max) • Function Compatible with Other Standard Logic Families • QFN−16 Package • Latchup Performance Exceeds 300 mA • ESD Performance: HBM > 2000 V; Machine Model > 200 V • Chip Complexity: 40 FETs or 10 Equivalent Gates http://onsemi.com MARKING DIAGRAM 16 1 NLSF 302 ALYW QFN−16 MN SUFFIX CASE 485G (Top View) A L Y W = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping† NLSF302MN QFN−16, 3x3 123 Units/Rail NLSF302MNR2 QFN−16, 3x3 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 1 1 Publication Order Number: NLSF302/D NLSF302 A1 B1 A2 B2 A3 B3 A4 B4 16 15 1 Y1 FUNCTION TABLE 4 3 5 Inputs Y2 Y=A+B 7 9 8 Y3 B C L L H H L H L H H L L L 10 13 12 Y4 Figure 1. LOGIC DIAGRAM A1 Y1 VCC Y4 B1 16 15 14 13 1 12 B4 NC 2 NLSF302 MN Package 11 NC Y2 3 (Top View) 10 A4 A2 4 9 Y3 GND B2 7 8 B3 6 A3 5 Figure 2. Pin Assignment (QFN−16) http://onsemi.com 2 Output A NLSF302 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage – 0.5 to + 7.0 V Vin DC Input Voltage – 0.5 to + 7.0 V Vout DC Output Voltage – 0.5 to VCC + 0.5 V IIK Input Diode Current − 20 mA IOK Output Diode Current ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air 450 mW Tstg Storage Temperature – 65 to + 150 °C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. NOTES: Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. RECOMMENDED OPERATING CONDITIONS ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ Symbol Parameter VCC DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature tr, tf Input Rise and Fall Time VCC = 3.3 V ± 0.3 V VCC =5.0 V ± 0.5 V Min Max Unit 2.0 5.5 V 0 5.5 V 0 VCC V −40 +85 °C 0 0 100 20 ns/V DC ELECTRICAL CHARACTERISTICS Min 1.50 VCC x 0.7 Symbol Parameter VIH Minimum High−Level Input Voltage 2.0 3.0 to 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 to 5.5 VOH Minimum High−Level Output Voltage VOL Maximum Low−Level Output Voltage Test Conditions TA = 25°C VCC V Typ TA = − 40 to 85°C Max Min 1.50 VCC x 0.7 0.50 VCC x 0.3 Vin = VIH or VIL IOH = −50A 2.0 3.0 4.5 1.9 2.9 4.4 Vin = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 Vin = VIH or VIL IOL = 50 A 2.0 3.0 4.5 Vin = VIH or VIL IOL = 4 mA IOL = 8 mA Max 2.0 3.0 4.5 Unit V 0.50 VCC x 0.3 V V 1.9 2.9 4.4 2.48 3.80 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 V Iin Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 A ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20.0 A http://onsemi.com 3 NLSF302 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C Typ Max Min Max Unit VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 5.6 8.1 7.9 11.4 1.0 1.0 9.5 13.0 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.6 5.1 5.5 7.5 1.0 1.0 6.5 8.5 4 10 Symbol Parameter Test Conditions tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y Cin Min TA = − 40 to 85°C Maximum Input Capacitance 10 pF Typical @ 25°C, VCC = 5.0 V CPD 15 Power Dissipation Capacitance (Note 1) pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0V) TA = 25°C Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL − 0.3 − 0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V Symbol Characteristic TEST POINT A or B VCC 50% tPLH Y OUTPUT DEVICE UNDER TEST GND tPHL CL* 50% VCC *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit http://onsemi.com 4 NLSF302 PACKAGE DIMENSIONS QFN−16 MN SUFFIX CASE 485G−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. −X− A M −Y− DIM A B C D E F G H J K L M N P R B N 0.25 (0.010) T 0.25 (0.010) T J R C 0.08 (0.003) T −T− K SEATING PLANE E H G L 5 8 4 9 1 12 F 16 D 13 P NOTE 3 0.10 (0.004) M T X Y http://onsemi.com 5 MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.23 0.28 1.75 1.85 1.75 1.85 0.50 BSC 0.875 0.925 0.20 REF 0.00 0.05 0.35 0.45 1.50 BSC 1.50 BSC 0.875 0.925 0.60 0.80 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.009 0.011 0.069 0.073 0.069 0.073 0.020 BSC 0.034 0.036 0.008 REF 0.000 0.002 0.014 0.018 0.059 BSC 0.059 BSC 0.034 0.036 0.024 0.031 NLSF302 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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