EMF17 / UMF17N Transistors Power management (dual transistors) EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Application Power management circuit !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (6) 0.5 0.5 1.0 1.6 0.22 EMF17 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions Abbreviated symbol : F17 ROHM : EMT6 !Structure Silicon epitaxial planar transistor 1.3 0.7 0.1Min. Tr1 R1 0to0.1 DTr2 0.9 2.1 (1) 0.15 (2) 0.65 (1) (6) 1.25 (3) 2.0 (3) (2) (4) (5) 0.2 !Equivalent circuits 0.65 UMF17N Each lead has same dimensions R2 (4) (5) ROHM : UMT6 EIAJ : SC-88 (6) Abbreviated symbol :F17 R1=2.2kΩ R2=2.2kΩ !Package, marking, and packaging specifications Type EMF17 UMF17N Package EMT6 UMT6 Marking F17 F17 Code T2R TR Basic ordering unit(pieces) 8000 3000 1/4 EMF17 / UMF17N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Parameter Collector current IC −150 mA Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ ∗ 120mW per element must not be exceeded. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC −10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −60 - - V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 - - V IC = −1mA Emitter-base breakdown voltage BVEBO −6 - - V IE = −50µA Collector cutoff current ICBO - - −0.1 µA VCB = −60V Emitter cutoff current IEBO - - −0.1 µA VEB = −6V VCE(sat) - - −0.5 V IC/IB = −50mA/−5mA hFE 120 - 560 - VCE = −6V, IC = −1mA fT - 140 - MHz Cob - 4 5 pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Unit Conditions VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 20 Typ. − − 100 − − − Max. 0.5 − 300 3.8 0.5 − Unit V V mV mA µA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA fT R1 R2/R1 − 1.54 0.8 250 2.2 1.0 − 2.86 1.2 MHz kΩ − VCE=10V, IE=−5mA, f=100MHz ∗ − − ∗ Characteristics of built-in transistor. 2/4 EMF17 / UMF17N Transistors !Electrical characteristic curves Tr1 -5 -2 -1 -0.5 -0.2 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.4 -0.8 -1.2 -1.6 -250 -60 -200 -150 -40 -100 -20 -50µA 0 Fig.2 Grounded emitter output characteristics ( Ι ) DC CURRENT GAIN : hFE 25°C 100 -40°C 200 100 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -5 -10 -20 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 -50 -100 Ta = 25°C VCE = -12V 200 100 50 1 2 5 10 20 -5 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.5 -4 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1000 -1 -0.2 -2 -3 -1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 100°C 200 -2 Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 VCE = -5V -3V -1V Ta = 25°C -1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -500 -450 -400 -350 -300 -80 IB = 0 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -28.0 -8 Ta = 25°C IB = 0 BASE TO EMITTER VOLTAGE : VBE (V) 500 -100 -31.5 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -0.1 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -35.0 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF17 / UMF17N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 2m 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4