ETC IMF4

UMF4N
Transistors
Power management (dual transistors)
UMF4N
2SA2018 and DTC123EE are housed independently in a UMT package.
0.65
1.25
2.0
0.65
1.3
(3)
(1)
(2)
(4)
(5)
(6)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
!External dimensions (Units : mm)
0.2
!Application
Power management circuit
(2)
DTr2
0.9
0.7
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
!Equivalent circuits
(3)
0.1Min.
0~0.1
!Structure
Silicon epitaxial planar transistor
0.15
2.1
(1)
Tr1
R1
R2
(4)
(5)
(6)
R1=2.2kΩ
R2=2.2kΩ
!Package, marking, and packaging specifications
Type
UMF4N
Package
UMT6
Marking
F4
Code
TR
Basic ordering unit(pieces)
3000
1/4
UMF4N
Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Limits
Symbol
−15
VCBO
VCEO
−12
VEBO
−6
IC
−500
Collector current
ICP
−1.0
PC
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Limits
VCC
50
VIN
−10~+20
100
IC
100
IO
150(TOTAL)
PC
Tj
150
Tstg
−55~+150
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
Min.
−
3.0
−
−
−
20
Typ.
−
−
100
−
−
−
Max.
0.5
−
300
3.8
0.5
−
Unit
V
V
mV
mA
µA
−
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=20mA
fT
R1
R2/R1
−
1.54
0.8
250
2.2
1.0
−
2.86
1.2
MHz
kΩ
−
VCE=10V, IE=−5mA, f=100MHz ∗
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
−
−
∗ Characteristics of built-in transistor.
2/4
UMF4N
Transistors
!Electrical characteristic curves
1000
VCE=2V
Pulsed
0.2
0.4
0.6
0.8
DC CURRENT GAIN : hFE
1.0
1.2
Ta=25°C
Ta=−40°C
100
10
1
1.4
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
10000
Ta=125°C
Ta=25°C
Ta=−40°C
10
1
1
10
100
1000
Ta=125°C
100
10
1
COLLECTOR CURRENT : IC (mA)
100
Cib
10
Cob
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
1000
Fig.6 Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : IC (A)
IE=0A
f=1MHz
Ta=25°C
IC/IB=10
10
EMITTER CURRENT : IE (mA)
vs. collector current
1000
1
1000
Fig.5 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
1
0.1
100
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
IC/IB=50
IC/IB=20
1000
Ta=−40°C
Ta=25°C
100
vs. collector current ( Ι )
IC/IB=20
Pulsed
1000
Ta=25°C
Pulsed
Fig.3 Collector-emitter saturation voltage
collector current
IC/IB=20
Pulsed
100
1000
Fig.2 DC current gain vs.
BASER SATURATION VOLTAGE : VBE (sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
COLLECTOR CURRENT : IC (mA)
1000
TRANSITION FREQUENCY : fT (MHz)
0
Ta= −40°
C
10
Ta=25°
C
5°C
100
1
VCE=2V
Pulsed
Ta=125°C
Ta=12
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Tr1
Ta=25°C
Single Pulsed
1
10ms
100ms
1ms
DC
0.1
0.01
0.001
0.01
0.1
1
10
100
EMITTER CURRENT : VCE (V)
Fig.8 Safe operation area
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
UMF4N
Transistors
DTr2
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
1m
500µ
Ta=100°C
25°C
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Fig.9 Input voltage vs. output current
(ON characteristics)
VO=5V
500
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
1
2m
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.10 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.11 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
500m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output
current
4/4