EMF21 / UMF21N Transistors Power management (dual transistors) EMF21 / UMF21N 2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package. zExternal dimensions (Units : mm) zApplication Power management circuit zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (6) 0.5 0.5 1.0 1.6 0.22 EMF21 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions Abbreviated symbol : F21 ROHM : EMT6 zStructure Silicon epitaxial planar transistor R2 (4) (5) 1.3 0.7 0.1Min. Tr1 R1 ROHM : UMT6 EIAJ : SC-88 (6) 0 to 0.1 DTr2 0.9 2.1 (1) 0.15 (2) 0.65 (1) (6) 1.25 (3) 2.0 (3) (2) (4) (5) 0.2 zEquivalent circuits 0.65 UMF21N Each lead has same dimensions Abbreviated symbol :F21 R1=10kΩ R2=10kΩ zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit(pieces) EMF21 EMT6 F21 T2R 8000 UMF21N UMT6 F21 TR 3000 1/4 EMF21 / UMF21N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO −15 VCEO −12 VEBO −6 IC −500 Collector current ICP −1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Limits Symbol 50 VCC −10~+40 VIN 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz DTr2 Parameter Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 30 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − fT − 250 − MHz Input voltage Output voltage Input current Output current Transition frequency Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VCE=10V, IE=−5mA, f=100MHz ∗ ∗ Transition frequency of the device 2/4 EMF21 / UMF21N Transistors zElectrical characteristic curves 1000 VCE=2V Pulsed 0 0.2 0.4 DC CURRENT GAIN : hFE C Ta= −40° 0.6 0.8 1.0 1.2 Ta=25°C Ta=−40°C 100 10 1 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) 10000 Ta=125°C Ta=25°C Ta=−40°C 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=−40°C Ta=125°C 100 10 1 10 100 vs. collector current ( ΙΙ ) Fig.5 Base-emitter saturation voltage vs. collector current 1000 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C 100 IC/IB=50 IC/IB=20 IC/IB=10 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) vs. collector current ( Ι ) IC/IB=20 Pulsed 1000 Ta=25°C Pulsed Fig.3 Collector-emitter saturation voltage collector current BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.2 DC current gain vs. IC/IB=20 Pulsed 100 1000 COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics 1000 100 1000 1000 TRANSITION FREQUENCY : fT (MHz) 1 Ta=25° C 5°C 100 10 VCE=2V Pulsed Ta=125°C Ta=12 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF21 / UMF21N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 2m 1m 500µ 1k VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 4/4 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.