EMF18 / UMF18N Transistors Power management (dual transistors) EMF18 / UMF18N 2SA1774 and DTC144EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMF18 0.22 (1) 0.13 1.2 1.6 0.5 !Application Power management circuit Each lead has same dimensions Abbreviated symbol : F18 ROHM : EMT6 0.7 0.1Min. Tr1 R1 0to0.1 DTr2 1.3 2.1 (1) 0.9 (2) 0.15 (3) 0.65 (1) (6) 1.25 2.0 (3) (2) (5) 0.2 !Equivalent circuits 0.65 UMF18N (4) !Structure Silicon epitaxial planar transistor Each lead has same dimensions R2 (4) ROHM : UMT6 EIAJ : SC-88 (5) Abbreviated symbol :F18 (6) R1=47kΩ R2=47kΩ !Packaging specifications Type EMF18 UMF18N EMT6 UMT6 Package F18 F18 Marking T2R TR Code 3000 Basic ordering unit (pieces) 8000 1/4 EMF18 / UMF18N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Parameter Collector current IC −150 mA Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ ∗ 120mW per element must not be exceeded. DTr2 Limits Parameter Symbol 50 VCC Supply voltage −10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA ICBO − − −0.1 µA VCB = −60V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Unit Conditions IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA hFE 120 − 560 − fT − 140 − MHz Cob − 4 5 pF VCE = −6V, IC = −1mA VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 68 Typ. − − 100 − − − Max. 0.5 − 300 180 500 − Unit V V mV µA nA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA fT − 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗ R1 R2/R1 32.9 0.8 47 1.0 61.1 1.2 kΩ − − − ∗Characteristics of built-in transistor. 2/4 EMF18 / UMF18N Transistors !Electrical characteristic curves Tr1 -5 -2 -1 -0.5 -0.2 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -50µA -5 100 50 VCE = -6V -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) TRANSITION FREQUENCY : fT (MHz) -0.5 -50 -100 Ta = 25°C VCE = -12V 200 100 50 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current -4 -5 -1 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.5 -3 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1000 lC/lB = 10 -2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -0.2 -40°C 200 COLLECTOR CURRENT : IC (mA) -1 -1 Fig.3 Grounded emitter output characteristics ( ΙΙ ) 25°C -10 -20 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -2 IB = 0 -2.0 Fig.2 Grounded emitter output characteristics ( Ι ) DC CURRENT GAIN : hFE -1 -1.6 Ta = 100°C 100 -0.5 -1.2 -0.8 500 200 -0.2 -0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) VCE = -5V -3V -1V Ta = 25°C 50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25°C IB = 0 Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -28.0 -8 BASE TO EMITTER VOLTAGE : VBE (V) 500 -100 -31.5 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -0.1 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -35.0 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF18 / UMF18N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4