Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current ICP −30 A IC −20 A PC 100 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation TC = 25°C Ta = 25°C 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Symbol Collector current 21.0±0.5 (0.7) ■ Absolute Maximum Ratings TC= 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw (3.2) 11.0±0.2 16.2±0.5 (3.5) Solder Dip ■ Features Parameter 5.0±0.2 15.0±0.3 10.9±0.5 1 2 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-96 TOP-3F-A Package 3 3 ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions ICBO VCB = −100 V, IE = 0 Emitter cutoff current IEBO VEB = −5 V, IC = 0 Collector to emitter voltage VCEO IC = −10 mA, IB = 0 hFE1 Collector cutoff current Forward current transfer ratio Min VCE = −2 V, IC = − 0.1 A 45 VCE = −2 V, IC = −3 A 90 30 hFE3 VCE = −2 V, IC = −10 A VCE(sat)1 IC = −8 A, IB = − 0.4 A VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 IC = −20 A, IB = −2 A Max Unit −10 µA −50 µA −80 hFE2 * Collector to emitter saturation voltage Typ V 260 − 0.5 V IC = −20 A, IB = −2 A −1.5 V IC = −8 A, IB = − 0.4 A −1.5 V −2.5 V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 25 MHz Turn-on time ton IC = −3 A, IB1 = − 0.8 A, IB2 = 0.8 A, 0.5 µs Storage time tstg VCC = −50 V 1.2 µs Fall time tf 0.2 µs Transition frequency Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 2SB1156 Power Transistors IC VCE 160 120 (1) 80 40 –16 –200mA –140mA –12 –100mA –60mA –4 –3 –1 (2) (1) – 0.1 –40mA – 0.03 –20mA 0 50 75 100 125 150 0 –2 –3 TC=100˚C –1 25˚C – 0.3 – 0.1 –10 –12 –1 –3 –10 –30 –10 –3 TC=–25˚C –1 100˚C 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 fT I C –1 –3 VCE=–10V f=10MHz TC=25˚C 3 1 3 10 3 –10 – 0.3 –1 1 ton tf 0.3 –3 –10 –30 Area of safe operation (ASO) tstg Non repetitive pulse TC=25˚C ICP t=1ms IC –10 10ms DC –3 –1 – 0.3 0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 0.03 0.01 Collector current IC (A) –25˚C 30 –100 0.3 –3 25˚C 100 –30 Switching time ton,tstg,tf (µs) 10 –1 TC=100˚C Collector current IC (A) 10 0.1 – 0.01 – 0.03 – 0.1 – 0.3 300 1 – 0.1 –10 ton, tstg, tf IC 1000 30 –30 VCE=–2V Collector current IC (A) 100 –10 1000 Collector current IC (A) 300 –3 IC/IB=10 –30 – 0.03 – 0.3 –1 hFE IC Collector current IC (A) – 0.01 – 0.1 – 0.3 VBE(sat) IC – 0.1 – 0.03 – 0.01 – 0.1 Collector current IC (A) – 0.3 –25˚C –8 –100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –6 Collector to emitter voltage VCE (V) VCE(sat) IC –10 –4 Forward current transfer ratio hFE 25 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) (1) IC/IB=10 (2) IC/IB=20 TC=25˚C –10 – 0.3 –80mA –8 (2) (3) 0 Transition frequency fT (MHz) TC=25˚C IB=–300mA Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) 0 2 VCE(sta) IC –20 Collector to emitter saturation voltage VCE(sat) (V) PC T a 200 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) – 0.1 – 0.03 –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1156 Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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