Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● ■ 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current IC –5 A Collector power TC=25°C 40 PC Ta=25°C dissipation Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 150 ˚C –55 to +150 ˚C 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 2.7±0.2 4.0 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –100V, IE = 0 –10 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –50 µA Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –2A 90 Collector to emitter saturation voltage VCE(sat) IC = –4A, IB = – 0.2A Base to emitter saturation voltage VBE(sat) IC = –4A, IB = – 0.2A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = –2A, IB1 = – 0.2A, IB2 = 0.2A V 260 – 0.5 –1.5 V V 30 MHz 0.13 µs 0.5 µs 0.13 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. Note.) The Part number in the Parenthesis shows conventional part number. 1 Power Transistors 2SB0945 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 30 (1) 20 10 –100mA –6 –80mA –60mA –5 –40mA –4 –30mA –3 –2 –10mA –1 (4) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –8 –10 TC=–25˚C 100˚C – 0.03 –3 1000 300 TC=100˚C 100 30 10 3 –1 –3 10 –100 Collector to base voltage VCB (V) –1 –3 –10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 1 tstg 0.3 ton 0.1 Non repetitive pulse TC=25˚C –30 –10 ICP IC –3 t=0.5ms 10ms 1ms –1 DC – 0.3 – 0.1 tf – 0.03 0.01 –30 10 Collector current IC (A) 0.03 3 –10 30 –100 30 Switching time ton,tstg,tf (µs) 30 –3 100 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 ton, tstg, tf — IC 100 –1 300 3 100 300 1 – 0.1 – 0.3 25˚C –25˚C Cob — VCB 1000 –10 VCE=–10V f=10MHz TC=25˚C 3000 Collector current IC (A) 10000 –3 fT — IC 3000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 IE=0 f=1MHz TC=25˚C –1 Collector current IC (A) 10000 Collector current IC (A) 3000 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –3 –1 –25˚C VCE=–2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –6 1000 –10 – 0.1 Collector output capacitance Cob (pF) –4 IC/IB=20 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 25˚C TC=100˚C hFE — IC – 0.3 2 –2 10000 –1 –1 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 25˚C –3 – 0.03 –3mA 0 –10 – 0.1 (2) (3) IC/IB=20 –30 – 0.3 –20mA Collector current IC (A) 40 TC=25˚C IB=–120mA –7 Collector to emitter saturation voltage VCE(sat) (V) –100 –8 Collector current IC (A) Collector power dissipation PC (W) 50 0 – 0.8 –1.6 –2.4 Collector current IC (A) –3.2 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB0945 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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