Power Transistors 2SD1445, 2SD1445A Silicon NPN epitaxial planar type For power amplification, power switching and low-voltage switching Complementary to 2SB0948 (2SB948) and 2SB0948A (2SB948A) Parameter Collector to base voltage Collector to emitter voltage 16.7±0.3 φ 3.1±0.1 1.4±0.1 Rating Unit 2.54±0.3 VCBO 40 V 5.08±0.5 2SD1445 2SD1445A 2SD1445 20 VCEO V 1 2 3 40 VEBO 5 V Peak collector current ICP 20 A Collector current IC 10 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C TC = 25°C Ta = 25°C 0.5+0.2 –0.1 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 50 2SD1445A 1.3±0.2 0.8±0.1 Symbol Emitter to base voltage Collector power dissipation 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 2.7±0.2 Solder Dip (4.0) • Low collector to emitter saturation voltage VCE(sat) • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 5.5±0.2 7.5±0.2 ■ Features 4.2±0.2 4.2±0.2 0.7±0.1 Unit: mm 10.0±0.2 2 ■ Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol 2SD1445 Unit VCB = 40 V, IE = 0 50 µA VCB = 50 V, IE = 0 50 IEBO VEB = 5 V, IC = 0 50 VCEO IC = 10 mA, IB = 0 2SD1445A Emitter cutoff current Collector to emitter voltage Max ICBO 2SD1445 Conditions 2SD1445A Forward current transfer ratio Min Typ 20 µA V 40 VCE = 2 V, IC = 0.1 A 45 hFE2 * VCE = 2 V, IC = 3 A 90 Collector to emitter saturation voltage VCE(sat) IC = 10 A, IB = 0.33 A 0.6 V Base to emitter saturation voltage VBE(sat) IC = 10 A, IB = 0.33 A 1.5 V Transition frequency hFE1 fT 260 VCE = 10 V, IC = 0.5 A, f = 10 MHz 120 MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 200 pF Turn-on time ton IC = 3 A, IB1 = 0.1 A, IB2 = − 0.1 A, 0.3 µs Storage time tstg VCC = 20 V 0.4 µs Fall time tf 0.1 µs Collector output capacitance Note)The part numbers in the parenthesis show conventional part number. Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. (2SD1445A only) 1 2SD1445, 2SD1445A Power Transistors PC T a IC VCE 60 50 (1) 40 30 20 Collector to emitter saturation voltage VCE(sat) (V) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2.0W) 70 VCE(sat) IC 10 TC=25˚C IB=100mA Collector current IC (A) Collector power dissipation PC (W) 80 90mA 80mA 8 70mA 60mA 50mA 6 40mA 4 30mA 20mA 2 (2) 10 10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) VBE(sat) IC hFE IC IC/IB=20 10 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) fT I C 3 25˚C –25˚C TC=100˚C 0.3 0.1 0.03 0.3 1 3 10 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 0.1 30 Collector current IC (A) 0.3 ton tstg 0.1 tf 0.03 0.01 t=1ms DC 3 1 0.3 0.1 0.01 3 4 Collector current IC (A) 5 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) t=10ms 0.03 2 30 IC 10 2SD1445 1 1 10 Non repetitive pulse TC=25˚C 30 ICP 3 0 3 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 10 1 100 Pulsed tw=1ms Duty cycle=1% IC/IB=30(IB1=–IB2) VCC=30V TC=25˚C 30 0.3 Collector current IC (A) ton, tstg, tf IC 100 300 0.3 2SD1445A 1 Transition frequency fT (MHz) 1000 0.01 0.1 2 VCE=10V f=10MHz TC=25˚C VCE=10V IC/IB=20 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1445, 2SD1445A Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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