Power Transistors 2SD2000 Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 14.0±0.5 • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For power switching Collector to base voltage 2.54±0.3 Symbol Rating Unit VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 8 A Collector current IC 4 A Base current IB 1 A PC 35 W Collector power dissipation TC = 25°C Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter 1.3±0.2 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 1 2 3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions Min ICBO VCB = 80 V, IE = 0 Emitter to base current IEBO VEB = 6 V, IC = 0 Collector to emitter voltage VCEO IC = 25 mA, IB = 0 60 Forward current transfer ratio hFE1 * Typ Max Unit 100 µA 100 µA V VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 4 A 20 250 Base to emitter saturation voltage VBE(sat) VCE = 4 V, IC = 4 A 2.0 V Collector to emitter saturation voltage VCE(sat) IC = 4 A, IB = 0.4 A 1.5 V Transition frequency fT VCE = 12 V, IC = 0.2 A, f = 10 MHz 80 MHz Turn-on time ton IC = 4 A, IB1 = 0.4 A, IB2 = − 0.4 A, 0.3 µs Storage time tstg VCC = 50 V 1.0 µs Fall time tf 0.2 µs Note) *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 2SD2000 Power Transistors PC T a IC VCE VCE(sat) IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 35 30 25 20 15 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 4 TC=25˚C IB=40mA 35mA Collector current IC (A) Collector power dissipation PC (W) 40 3 30mA 25mA 20mA 2 15mA 10mA 1 5mA (3) 5 (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 VBE(sat) IC 7 8 3 TC=–25˚C 100˚C 25˚C 0.1 0.03 0.3 1 1 0.3 TC=100˚C 0.1 3 0.03 0.01 0.01 0.03 103 TC=100˚C 102 –25˚C 25˚C 10 1 0.01 0.03 Collector current IC (A) Cob VCB 0.1 0.3 1 3 1 100 10 10 1 10 0.3 1 3 10 Area of safe operation (ASO) 100 Non repetitive pulse TC=25˚C 30 tstg 1 ton tf 0.1 0.1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C IE=0 f=1MHz TC=25˚C Switching time ton,tstg,tf (µs) 3 100 0.1 0.01 0.03 10 ton, tstg, tf IC 10000 10 0.3 VCE=12V f=10MHz TC=25˚C Collector current IC (A) 100 0.1 VCE=4V 10 1000 –25˚C 25˚C fT I C Collector current IC (A) 0.1 3 Collector current IC (A) Transition frequency fT (MHz) 10 0.3 10 1000 IC/IB=10 30 1 30 hFE IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 6 104 0.01 0.01 0.03 Collector output capacitance Cob (pF) 5 IC/IB=10 Collector to emitter voltage VCE (V) 100 10 ICP 3 IC t=1ms DC 1 0.3 0.1 0.03 0.01 1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2 4 100 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2000 Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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