Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For power switching Complementary to 2SD1271 0.8±0.1 1.3±0.2 0.5+0.2 –0.1 2.54±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating 5.08±0.5 VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current ICP −15 A Collector current IC −7 A PC 40 W Collector to base voltage Collector power dissipation TC = 25°C Ta = 25°C 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package Unit 1 2 3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −50 µA Collector to emitter voltage VCEO IC = −10 mA, IB = 0 −80 Forward current transfer ratio hFE1 VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = −3 A 90 Collector to emitter saturation voltage VCE(sat) IC = −5 A, IB = − 0.25 A Base to emitter saturation voltage VBE(sat) IC = −5 A, IB = − 0.25 A V 260 − 0.5 −1.5 V V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz Turn-on time ton IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A Storage time tstg Fall time tf 0.1 µs Transition frequency 30 MHz 0.5 µs 1.5 µs Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. Note.) The Part number in the Parenthesis shows conventional part number. 1 2SB0946 Power Transistors PC T a IC VCE VCE(sat) IC –100 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 40 30 (1) 20 10 TC=25˚C IB=–120mA –110mA –100mA –90mA –80mA –70mA –8 –60mA –6 –40mA –30mA –4 –10mA 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 TC=100˚C –25˚C 25˚C –8 –10 –10 TC=–25˚C 100˚C 25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 25˚C 300 TC=100˚C 100 –25˚C 30 10 3 –1 –3 –10 –30 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 Collector to base voltage VCB (V) –10 ICP 3 1 tstg 0.3 –10 –3 IC t=0.5ms 1ms 10ms –1 DC – 0.3 ton tf 0.1 – 0.1 – 0.03 0.01 –100 –3 Non repetitive pulse TC=25˚C –30 0.03 3 –1 Area of safe operation (ASO) Collector current IC (A) 30 –30 10 –100 30 Switching time ton,tstg,tf (µs) 100 –10 30 Collector current IC (A) ton, tstg, tf IC 300 –3 100 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 100 –1 300 3 Cob IC IE=0 f=1MHz TC=25˚C –100 1000 Collector current IC (A) 10000 –30 VCE=–10V f=10MHz TC=25˚C 3000 1 – 0.1 – 0.3 –10 1000 –10 VCE=–2V 3000 Collector current IC (A) 3000 –3 fT I C 1000 –3 –1 Collector current IC (A) Transition frequency fT (MHz) –30 –1 – 0.01 – 0.1 – 0.3 10000 IC/IB=20 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –1 hFE IC – 0.1 Collector output capacitance Cob (pF) –6 10000 – 0.3 2 –3 Collector to emitter voltage VCE (V) VBE(sat) IC –100 1 – 0.1 – 0.3 –10 – 0.03 0 20 –30 – 0.1 (4) 0 IC/IB=20 – 0.3 –20mA –2 (2) (3) Collector to emitter saturation voltage VCE(sat) (V) –10 Collector current IC (A) Collector power dissipation PC (W) 50 0 –2 –4 –6 Collector current IC (A) –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB0946 Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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