Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.5 0.5 3 2 (Ta=25˚C) Parameter 1 +0.1 0.15–0.05 0 to 0.1 ■ Absolute Maximum Ratings 0.4 0.45±0.1 0.3 ● 1.6±0.1 ● Low noise figure NF. High gain. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 ● 0.75±0.15 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : HT (Ta=25˚C) Parameter Conditions Symbol min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA * Forward current transfer ratio hFE Transition frequency fT VCE = 5V, IC = 10mA, f = 2GHz Collector output capacitance Cob VCB = 5V, IE = 0, f = 1MHz Foward transfer gain | S21e |2 VCE = 5V, IC = 10mA, f = 1GHz Noise figure NF VCE = 5V, IC = 3mA, f = 1GHz *h FE VCE = 5V, IC = 10mA 80 200 7.0 0.6 8.5 GHz 1.0 11.0 1.6 pF dB 2 dB Rank classification Rank Q R S hFE 80 ~ 115 95 ~ 155 135 ~ 200 Marking Symbol HTQ HTR HTS 1 2SC5379 Transistor PC — Ta IC — VCE 60 50 100 75 50 25 50 40 IB=300µA 250µA 30 200µA 20 150µA 100µA 10 25˚C 40 Ta=75˚C –25˚C 30 20 10 50µA 0 40 60 80 100 120 140 160 0 0 1 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 6 0 30 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 1 3 10 30 6 4 2 4 8 10 Collector to base voltage VCB (V) 8 12 16 20 Collector current IC (mA) NF — IC 3.0 VCE=5V f=1GHz Ta=25˚C 12 2.4 9 6 3 1.8 1.2 0.6 VCE=5V f=1GHz Ta=25˚C 0 4 6 0 Noise figure NF (dB) Forward transfer gain |S21e|2 (dB) 0 2 8 100 15 0.2 1.2 VCE=5V | S21e |2 — IC 1.0 1.0 0 0.3 Cob — VCB 0.4 0.8 fT — IC Collector current IC (mA) 0.6 0.6 10 0 0.1 100 0.8 0.4 VCE=5V Collector current IC (mA) 0 0.2 Base to emitter voltage VBE (V) 240 Forward current transfer ratio hFE 30 0.1 5 hFE — IC IC/IB=10 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 3 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=5V Ta=25˚C 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 150 0 0 4 8 12 16 Collector current IC (mA) 20 0 2 4 6 8 Collector current IC (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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