Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Parameter 0.15–0.05 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : V (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Forward current transfer ratio hFE* VCB = 10V, IE = –1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 0.9 1.5 pF *h FE 220 250 2.8 MHz 4 dB Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol VB VC 1 2SC3930 Transistor PC — Ta IC — VCE IC — I B 12 15.0 Ta=25˚C 10 160 120 80 40 0 20 40 60 80µA 8 60µA 6 4 40µA 2 20µA 80 100 120 140 160 6 18 Collector current IC (mA) 80 60 40 20 25˚C 40 Ta=75˚C –25˚C 30 20 10 0 0 0.8 1.0 0 Base to emitter voltage VBE (V) 0.4 0.8 hFE — IC 1.2 1.6 2.0 –25˚C 80 40 300 250 200 150 100 50 0.3 1 3 10 30 Collector current IC (mA) 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) Transition frequency fT (MHz) 25˚C 120 0 0.1 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 Zrb — IE VCB=10V f=100MHz Ta=25˚C 350 100 IC/IB=10 60 VCE=10V 80 30 fT — I E Ta=75˚C 60 Collector current IC (mA) 400 200 40 100 Base to emitter voltage VBE (V) 240 160 20 Base current IB (µA) Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 0.6 0 VCE(sat) — IC 60 100 Base current IB (µA) 2.5 12 VCE=10V Ta=25˚C 0.4 5.0 IC — VBE 120 0.2 7.5 Collector to emitter voltage VCE (V) IB — VBE 0 10.0 0 0 Ambient temperature Ta (˚C) Forward current transfer ratio hFE 12.5 0 0 2 VCE=10V Ta=25˚C IB=100µA Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (mW) 240 VCB=10V f=2MHz Ta=25˚C 50 40 30 20 10 0 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 Transistor 2SC3930 PG — IE 24 20 2.0 IC=3mA 1mA 1.5 1.0 16 12 8 0.5 6 4 1 3 10 30 2 0 – 0.1 – 0.3 100 –1 –3 –10 –30 Emitter current IE (mA) bie — gie 20 Reverse transfer susceptance bre (mS) 0 Vie=gie+jbie VCE=10V 0 f=10.7MHz yre=gre+jbre VCE=10V –7mA 100 –2mA IE=–1mA 12 IE=–1mA – 0.2 58 58 – 0.3 8 – 0.4 4 0 0 8 100 – 0.5 f=10.7MHz 16 24 32 40 Input conductance gie (mS) – 0.6 – 0.5 –1 –3 –10 bfe — gfe – 0.1 16 – 0.3 Emitter current IE (mA) bre — gre 24 –4mA 0 – 0.1 –100 Forward transfer susceptance bfe (mS) 0.3 Collector to emitter voltage VCE (V) Input susceptance bie (mS) 8 4 0 0.1 VCB=6V f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) 2.5 NF — IE 12 VCE=10V f=100MHz Ta=25˚C f=10.7MHz Ta=25˚C Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 3.0 f=10.7MHz 58 – 0.1mA 10.7 –1mA 100 –20 58 –2mA 100 –40 IE=–4mA –60 58 100 –80 –100 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe 1.2 Output susceptance boe (mS) yoe=goe+jboe VCE=10V 1.0 IE=–1mA 100 0.8 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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