JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846ALT1,BLT1 TRANSISTOR（ BC847ALT1, BLT1 CLT1 BC848ALT1, BLT1 CLT1 NPN ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR Parameter Symbol Collector-base breakdown voltage ０．９５ ０．４ ０．９５ ２．９ ２．４ １．３ １．９ Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage VCBO: BC846 80 V BC847 50 V BC848 30 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless １．０ FEATURES Unit : mm otherwise Test specified） conditions BC846 BC847 Ic= 10 μA， IE=0 BC846 BC847 Collector cut-off current Ic= 1 0 mA， IB=0 ICBO VCB= 30 V , IE=0 VCE= 60 V , IB=0 ICEO V VCE= 45 V , IB=0 0.1 μA 0.1 μA 0.1 μA VCE= 30 V , IB=0 IEBO VEB= 5 V , IC=0 BC846A,847A,848A BC846B,847B,848B V 6 VCB= 50 V , IE=0 BC848 Emitter cut-off current 45 VCB= 70 V , IE=0 BC848 DC current gain IE= 10 μA， IC=0 BC846 BC847 V 30 VEBO Collector cut-off current 50 65 VCEO BC848 Emitter-base breakdown voltage UNIT 30 BC846 BC847 MAX 80 VCBO BC848 Collector-emitter breakdown voltage MIN HFE（1） VCE= 5V, IC= 2mA BC847C/BC848C 110 220 200 450 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA Transition frequency fT 100 MHz f=100MHz DEVICE MARKING BC846AWT1=1A; BC846BWT1=1B;BC847AWT1=1E;BC847BWT1=1F;BC847CWT1=1G; BC848AWT1=1J; BC848BWT1=1K BC848CWT1=1L SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°