JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR（ PNP ） FEATURES TO—92 Power dissipation PCM: 0.625 W （Tamb=25℃） Collector current ICM: 1.EMITTER -0.2 A 2.BASE Collector-base voltage V(BR)CBO : -400 V 3. COLLECTOR Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL unless 1 2 3 CHARACTERISTICS （ Tamb=25 ℃ otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO Ic= -100μA， IE=0 -400 V Collector-emitter breakdown voltage V (BR) CEO IC= -1 mA，IB=0 -400 V Emitter-base breakdown voltage V (BR) EBO IE=-100μA，IC=0 Collector cut-off current ICBO VCB=-400 V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400 V, IB=0 -5 μA Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 μA hFE（1） VCE=-10V, IC=-10 mA 80 hFE（2） VCE=-10V, IC=-1mA 70 hFE（3） VCE=-10V, IC=-100 mA 60 VCE (sat) IC=-10 mA，IB=-1mA -0.2 V VCE (sat) IC=-50 mA，IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-10 mA，IB= -1 mA -0.75 V Transition frequency fT VCE=-20V， IC=-10mA f =30MHz DC current gain V -5 300 Collector-emitter saturation voltage 50 MHz TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015