NTHD5905T1 Power MOSFET Dual P-Channel ChipFET 3.0 Amps, 8 Volts Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package http://onsemi.com DUAL P–CHANNEL 3.0 AMPS, 8 VOLTS RDS(on) = 90 m Applications • Power Management in Portable and Battery–Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards S2 S1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 5 secs Unit Drain–Source Voltage VDS –8.0 V Gate–Source Voltage VGS 8.0 V Continuous Drain Current (TJ = 150°C) (Note 1.) TA = 25°C TA = 85°C ID IS Maximum Power Dissipation (Note 1.) TA = 25°C TA = 85°C PD Operating Junction and Storage Temperature Range –1.8 P–Channel MOSFET A –0.9 A W 2.1 1.1 TJ, Tstg P–Channel MOSFET 3.0 2.2 10 IDM Continuous Source Current (Diode Conduction) (Note 1.) D2 D1 A 4.1 2.9 Pulsed Drain Current G2 G1 Steady State ChipFET CASE 1206A STYLE 2 1.1 0.6 °C –55 to +150 1. Surface Mounted on 1″ x 1″ FR4 Board. MARKING DIAGRAM PIN CONNECTIONS 8 1 S1 1 8 D1 7 2 G1 2 7 D2 6 3 S2 3 6 D2 5 4 G2 4 5 A9 D1 A9 = Specific Device Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 Device Package Shipping NTHD5905T1 ChipFET 3000/Tape & Reel Publication Order Number: NTHD5905T1/D NTHD5905T1 THERMAL CHARACTERISTICS Characteristic Symbol Maximum Junction–to–Ambient (Note 2.) t 5 sec Steady State RthJA Maximum Junction–to–Foot (Drain) Steady State RthJF Typ Max 50 90 60 110 30 40 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = –250 µA –0.45 – – V Gate–Body Leakage IGSS VDS = 0 V, VGS = 8.0 V – – 100 nA Zero Gate Voltage Drain Current IDSS VDS = –6.4 V, VGS = 0 V – – –1.0 µA VDS = –6.4 V, VGS = 0 V, TJ = 85°C – – –5.0 ID(on) VDS –5.0 V, VGS = –4.5 V –10 – – A rDS(on) ( ) VGS = –4.5 V, ID = –3.0 A – 0.075 0.090 Ω VGS = –2.5 V, ID = –2.5 A – 0.110 0.130 VGS = –1.8 V, ID = –1.0 A – 0.150 0.180 gfs VDS = –5.0 V, ID = –3.0 A – 7.0 – S VSD IS = –0.9 A, VGS = 0 V – –0.8 –1.2 V – 5.5 9.0 nC Static Gate Threshold Voltage On–State Drain Current (Note 3.) Drain–Source On–State Resistance (Note 3.) Forward Transconductance (Note 3.) Diode Forward Voltage (Note 3.) Dynamic (Note 4.) Total Gate Charge Qg 40V 45V VDS = –4.0 V, VGS = –4.5 V, ID = –3.0 A Gate–Source Charge Qgs – 0.5 – Gate–Drain Charge Qgd – 1.5 – Turn–On Delay Time td(on) – 10 15 – 45 70 – 30 45 – 10 15 – 30 60 Rise Time Turn–Off Delay Time tr td(off) Fall Time tf Source–Drain Reverse Recovery Time trr VDD = –4.0 V, RL = 4 Ω ID –1.0 –1 0 A, A VGEN = –4 –4.5 5V V, RG = 6 Ω IF = –0.9 A, di/dt = 100 A/µs 2. Surface Mounted on 1″ x 1″ FR4 Board. 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 ns NTHD5905T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 10 TC = –55°C 2.5 V VGS = 5 thru 3 V 25°C 8 –I D,Drain Current (A) –I D,Drain Current (A) 8 2V 6 4 1.5 V 2 125°C 6 4 2 1V 0 0 0.5 1.0 1.5 2.0 2.5 –VDS, Drain–to–Source Voltage (V) 0 3.0 0 0.5 Figure 1.Output Characteristics 800 VGS = 1.8 V C, Capacitance (pF) r DS(on),On–Resistance ( Ω ) 1000 0.25 0.20 VGS = 2.5 V 0.15 VGS = 4.5 V 0.10 Ciss 600 400 Coss 200 0.05 Crss 0 0 0 2 4 6 –ID, Drain Current (A) 8 10 0 4 8 12 16 –VDS, Drain–to–Source Voltage (V) Figure 3.On–Resistance vs. Drain Current 20 Figure 4.Capacitance 5 1.6 r DS(on),On–Resistance ( Ω ) (Normalized) VGS,Gate–to–Source Voltage (V) 3.0 Figure 2.Transfer Characteristics 0.30 4 3 2 1 0 1.0 1.5 2.0 2.5 –VGS, Gate–to–Source Voltage (V) 0 1 2 3 4 Qg, Total Gate Charge (nC) 5 1.4 1.2 1.0 0.8 0.6 –50 6 VGS = 4.5 V ID = 3 A Figure 5.Gate Charge –25 0 25 50 75 100 TJ, Junction Temperature (°C) Figure 6.On–Resistance vs. Junction Temperature http://onsemi.com 3 125 150 NTHD5905T1 TYPICAL ELECTRICAL CHARACTERISTICS 0.25 rDS(on),On–Resistance ( Ω ) I S,Source Current (A) 10 TJ = 150°C TJ = 25°C 1 0.20 0.15 0.10 0.05 0 0 0.2 0.4 0.6 0.8 1.0 1.2 –VDS, Drain–to–Source Voltage (V) ID = 3 A 1.4 0 Figure 7.Source Diode Forward Voltage 5 Figure 8.On–Resistance vs. Gate–to–Source Voltage 0.4 50 0.3 40 ID = 250 µA 0.2 Power (W) V GS (th),Varience (V) 1 2 3 4 –VGS, Gate–to–Source Voltage (V) 0.1 30 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 TJ, Temperature (°C) 125 0 10–4 150 Figure 9.Threshold Voltage 10–3 10–2 10 –1 1 Time (sec) 10 Figure 10.Single Pulse Power http://onsemi.com 4 100 600 NTHD5905T1 TYPICAL ELECTRICAL CHARACTERISTICS Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 Notes: PDM 0.2 t1 0.1 t2 0.1 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90°C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10 –1 1 Square Wave Pulse Duration (sec) 10 100 600 Figure 11.Normalized Thermal Transient Impedance, Junction–to–Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10 –1 Square Wave Pulse Duration (sec) 1 Figure 12.Normalized Thermal Transient Impedance, Junction–to–Foot http://onsemi.com 5 10 NTHD5905T1 Notes http://onsemi.com 6 NTHD5905T1 PACKAGE DIMENSIONS CHIPFET CASE 1206A–01 ISSUE A A 8 7 M 6 K 5 S 5 6 7 8 4 3 2 1 B 1 2 3 L 4 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. J G DIM A B C D G J K L M S C 0.05 (0.002) MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.15 0.30 0.45 0.55 BSC 5 ° NOM --1.80 STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 7 SOURCE 1 GATE 1 SOURCE GATE 2 DRAIN 1 DRAIN 1 DRAIN 2 DRAIN 2 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.012 0.018 0.022 BSC 5 ° NOM --0.071 NTHD5905T1 ChipFET is a trademark of Vishay Siliconix ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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