STB90NF03L N-CHANNEL 30V - 0.0056Ω - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STB90NF03L ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0065 Ω 90 A TYPICAL RDS(on) = 0.0056 Ω TYPICAL Qg = 35 nC @ 5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 18 V ID Drain Current (continuos) at TC = 25°C 90 A ID Drain Current (continuos) at TC = 100°C 65 A Drain Current (pulsed) 360 A Total Dissipation at TC = 25°C 150 W Derating Factor 0.73 W/°C – 55 to 175 °C IDM (●) PTOT Tstg Tj Gate- source Voltage Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area October 2001 1/8 STB90NF03L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl 1 °C/W Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 30 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 18 V ±100 nA Max. Unit ON (1) Symbol Parameter VGS(th) Gate Threshold Voltage RDS(on) Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA Min. Typ. 1 V VGS = 10V, ID = 45 A 0.0056 0.0065 Ω VGS = 5V, ID = 45 A 0.007 0.012 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 45 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 40 S 2700 pF Ciss Input Capacitance Coss Output Capacitance 860 pF Crss Reverse Transfer Capacitance 170 pF STB90NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit 30 ns Rise Time VDD = 15V, ID = 45 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) 200 ns Qg Total Gate Charge VDD = 24V, ID =90A,VGS = 5V 35 Qgs Gate-Source Charge 10 nC Qgd Gate-Drain Charge 18 nC td(on) tr Turn-on Delay Time 47 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Conditions Min. VDD = 15V, ID = 45 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Fall Time Typ. Max. Unit 50 ns 105 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 90 A ISDM (1) Source-drain Current (pulsed) 360 A VSD (2) Forward On Voltage ISD = 90 A, VGS = 0 1.3 V trr Reverse Recovery Time ISD = 90 A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM 80 ns Reverse Recovery Charge 90 nC Reverse Recovery Current 2.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STB90NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB90NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB90NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB90NF03L TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D A2 A C C2 DET AIL "A" DET AIL "A" A1 B2 E B G L2 L L3 P011P6/E 7/8 STB90NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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