ETC UNR8231(UN8231)

Transistors with built-in Resistor
UNR8231/UNR8231A (UN8231/UN8231A)
Silicon NPN epitaxial planer transistor
Unit: mm
0.7
■ Absolute Maximum Ratings
Parameter
Collector to
base voltage
(Ta=25˚C)
Symbol
UNR8231
UNR8231A
UNR8231
Collector to
emitter voltage UNR8231A
Collector current
Unit
20
1.5
IC
0.7
A
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Parameter
3
(0.5)
Internal Connection
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
■ Electrical Characteristics
2
A
PT*
Total power dissipation
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
V
50
ICP
2.5±0.5
2.5±0.5
1
20
0.45+0.10
–0.05
1.05±0.05
V
60
VCEO
Peak collector current
0.45+0.10
–0.05
Ratings
VCBO
0.65 max.
14.5±0.5
●
High forward current transfer ratio hFE.
Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
Available in a type with radial taping.
(1.0)
■ Features
●
2.5±0.1
(0.8)
(1.0)
(0.2)
4.5±0.1
For switching
●
6.9±0.1
4.0
C
R1(1kΩ)
B
R2
(47kΩ)
E
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE = 0
1
µA
Collector cutoff current
ICEO
VCE = 15V, IB = 0
10
µA
IEBO
VEB = 14V, IC = 0
0.5
mA
Emitter cutoff current
Collector to base voltage
UNR8231
VCBO
IC = 10µA, IE = 0
VCEO
IC = 1mA, IB = 0
hFE*
VCE = 10V, IC = 150mA
Collector to emitter saturation voltage
VCE(sat)*
IC = 500mA, IB = 5mA
Input resistance
R1
Collector to emitter voltage
UNR8231A
UNR8231
UNR8231A
Forward current transfer ratio
Resistance ratio
Transition frequency
R1/R2
fT
VCB = 10V, IE = –50mA, f = 200MHz
20
V
60
20
V
50
800
2100
0.4
V
0.7
1
1.3
kΩ
0.016
0.021
0.025
200
MHz
*Pulse measurement
Note) The Part numbers in the Parenthesis show conventional part number.
1
Transistors with built-in Resistor
UNR8231/UNR8231A
PT — Ta
IC — VCE
1.2
1.0
0.8
0.6
0.4
IB=1.2mA
1.0mA
0.8
0.8mA
0.6mA
0.6
0.4mA
0.4
0.2mA
0.2
0.2
0
0
40
80
120
0
160
2
hFE — IC
Collector output capacitance Cob (pF)
Forward current transfer ratio hFE
2000
Ta=75˚C
25˚C
1200
–25˚C
800
400
0.3
10
12
1
Collector current IC
3
(A)
10
25
20
15
10
5
0
0.1
0.3
1
3
10
30
IC/IB=100
30
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
30
VCE=10V
0.1
8
Cob — VCB
2400
0
0.01 0.03
6
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
1600
4
Collector to emitter saturation voltage VCE(sat) (V)
1.0
Collector current IC (A)
Total power dissipation PT (W)
1.4
100
Ta=25˚C
Copper foil area of 1cm2 or
more and thickness of
1.7mm for the collector
portion.
0
2
VCE(sat) — IC
1.2
1.6
100
Collector to base voltage VCB (V)
10
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2001 MAR