Transistors with built-in Resistor UNR911TJ (UN911TJ) Silicon PNP epitaxial planer type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For digital circuit For switching 0.12+0.03 –0.01 2 0 to 0.02 (0.50)(0.50) (0.375) (0.80) 1 0.27±0.02 5° 0.70+0.05 –0.03 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-mini type package, allowing automatic insertion through tape packing. • Flat lead type, high mounting efficiency 1.60±0.05 ■ Features 5° 0.85+0.05 –0.03 3 Symbol Rating Unit Collector to base voltage Parameter VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −100 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector 0.10 max. ■ Absolute Maximum Ratings Ta = 25°C EIAJ: SC-81 SSMini3-F1 Type Package Marking Symbol: EY Internal Connection R1 (22 kΩ) B C R2 (47 kΩ) E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol Max Unit ICBO VCB = −50 V, IE = 0 Conditions Min Typ − 0.1 µA ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter cutoff current IEBO VEB = −6 V, IC = 0 − 0.2 mA Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V VCE = −10 V, IC = −5 mA 80 Forward current transfer ratio Collector to emitter saturation voltage hFE VCE(sat) High-level output voltage VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Low-level output voltage VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ Input resistance R1 Resistance ratio R1/R2 Transition frequency fT 400 IC = −10 mA, IB = − 0.3 mA − 0.25 V − 0.2 V +30% kΩ −4.9 −30% V 22 0.47 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) The part number in the parenthesis shows conventional part number. 1 UNR911TJ Transistors with built-in Resistor P T Ta IC VCE VCE(sat) IC −150 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C −125 100 −100 50 IB = −1.0 mA − 0.9 mA − 0.7 mA − 0.6 mA − 0.8 mA −75 − 0.5 mA − 0.4 mA −50 − 0.3 mA − 0.2 mA −25 − 0.1 mA 0 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) 0 −2.5 hFE IC Ta = 75°C 200 25°C 150 −25°C 100 50 −100 −1 000 Collector current IC (mA) Input voltage VIN (V) VO = 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 Output current IO (mA) 2 −25°C − 0.1 25°C − 0.01 −1 −10 −100 −100 −1 000 Collector current IC (mA) IO VIN 6 −10 000 5 −1 000 VO = −5 V Ta = 25°C −100 4 3 2 −10 −1 − 0.1 1 0 −1 −3 −10 −30 −100 Collector to base voltage VCB (V) VIN IO −100 Ta = 75°C −1 Output current IO (µA) Collector output capacitance Cob (pF) Forward current transfer ratio hFE 250 −10 −10 −10 Cob VCB VCE = 10 V −1 −7.5 IC / IB = 10 Collector to emitter voltage VCE (V) 300 0 − 0.1 −5 Collector to emitter saturation voltage VCE(sat) (V) −100 −175 150 − 0.01 − 0.25 −0.5 −0.75 −1 −1.25 Input voltage VIN (V) −1.5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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