Ordering number:EN2555A PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications Package Dimensions · DC-DC converters, motor drivers, relay drivers, lamp drivers. unit:mm 2038 [2SB1302] Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity. · Fast switching speed. · Very small size making it easy to provide highdensity, small-sized hybrid ICs. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO –25 V –20 V VEBO IC –5 V –5 A Collector Current (Pulse) ICP –8 A Collector Dissipation 1.3 W Junction Temperature PC Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Mounted on ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=–20V, IE=0 –500 nA Emitter Cutoff Current IEBO VEB=–4V, IC=0 VCE=–2V, IC=–500mA –500 nA DC Current Gain hFE1 Gain-Bandwidth Product hFE2 fT Output Capacitance Cob * : The 2SB1302 is classified by 500mA hFE as follows : Marking : BJ hFE rank : R, S, T 100* VCE=–2V, IC=–4A 60 VCE=–5V, IC=–200mA VCB=–10V, f=1MHz 100 R 200 140 400* S 280 200 T 320 MHz 60 pF 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1598HA (KT)/D2680MO/4097TA, TS No.2555–1/4 2SB1302 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol VCE(sat) VBE(sat) Conditions Ratings min typ max Unit IC=–3A, IB=–60mA –250 –500 mV IC=–3A, IB=–60mA –1.0 –1.3 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –25 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ –20 V Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time Fall Time IE=–10µA, IC=0 –5 V See specified test circuit. 40 ns tstg See specified test circuit. 200 ns tf See specified test circuit. 10 ns Switching Time Test Circuit No.2555–2/4 2SB1302 No.2555–3/4 2SB1302 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1998. Specifications and information herein are subject to change without notice. PS No.2555–4/4