Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Series The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 and 2900 Series devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers. Outline 15 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) 4.32 (.170) 3.81 (.150) CATHODE 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Maximum Ratings Junction Operating and Storage Temperature Range 5082-2303, -2900 ......................................................... -60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 ............................... -65°C to +200°C 5082-2835 .................................................................. -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temperature 5082-2303, -2900 ..................................................................... 100 mW 1N5711, 1N5712, 5082-2800/10/11 ........................................... 250 mW 5082-2835 .............................................................................. 150 mW Peak Inverse Voltage ........................................................................ VBR 5966-0930E 3-52 Package Characteristics Outline 15 Lead Material .............................................................................. Dumet Lead Finish ..................................................................... 95-5% Tin-Lead Max. Soldering Temperature ........................................... 260°C for 5 sec Min. Lead Strength ............................................................ 4 pounds pull Typical Package Inductance 1N5711, 1N5712: ....................................................................... 2.0 nH 2800 Series: .............................................................................. 2.0 nH 2300, 2900 Series: ..................................................................... 3.0 nH Typical Package Capacitance 1N5711, 1N5712: ....................................................................... 0.2 pF 2800 Series: .............................................................................. 0.2 pF 2300, 2900 Series: .................................................................... 0.07 pF The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. Electrical Specifications at TA = 25°C General Purpose Diodes Part Number Package Outline Min. Breakdown Voltage VBR (V) Max. Forward Voltage VF (mV) VF = 1 V Max. at Forward Current IF (mA) Max. Reverse Leakage Current IR (nA) at VR (V) Max. Capacitance CT (pF) 5082-2800 15 70 410 15 200 50 2.0 1N5711 15 70 410 15 200 50 2.0 5082-2810 15 20 410 35 100 15 1.2 1N5712 15 20 550 35 150 16 1.2 5082-2811 15 15 410 20 100 8 1.2 5082-2835 15 100 1 Test Conditions 8* 340 10* IR = 10 µA *IR = 100 µA IF = 1 mA *VF = 0.45 V 1.0 VR = 0 V f =1.0 MHz Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is measured at 20 mA. 3-53 Low 1/f (Flicker) Noise Diodes Package Outline Min. Breakdown Voltage VBR (V) Max. Forward Voltage VF (mV) VF = 1 V Max. at Forward Current IF (mA) 2303 15 20 400 35 500 15 1.0 2900 15 10 400 20 100 5 1.2 IR = 10 µA IF = 1 mA Part Number 5082- Test Conditions Max. Reverse Leakage Current IR (nA) at VR (V) Max. Capacitance CT (pF) VR = 0 V f =1.0 MHz Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA. Matched Pairs and Quads Basic Part Number 5082- Matched Pair Unconnected Matched Quad Unconnected 2900 5082-2912 ∆VF = 30 mV 5082-2970 ∆VF = 30 mV ∆VF at IF = 1.0, 10 mA 2800 5082-2804 ∆VF = 20 mV 5082-2805 ∆VF = 20 mV ∆VF at IF = 0.5, 5 mA *IF = 10 mA ∆CO at f = 1.0 MHz Batch Matched[1] Test Conditions 2811 5082-2826 ∆VF = 10 mV ∆CO = 0.1 pF ∆VF at IF = 10 mA ∆CO at f = 1.0 MHz 2835 5082-2080 ∆VF = 10 mV ∆CO = 0.1 pF ∆VF at IF =10 mA ∆CO at f = 1.0 MHz Note: 1. Batch matched devices have a minimum batch size of 50 devices. SPICE Parameters Parameter Units 5082-2800 5082-2810 5082-2811 5082-2835 5082-2303 5082-2900 BV CJ0 EG IBV IS N RS V pF eV A A 75 1.6 0.69 10E-5 2.2 x 10E - 9 1.08 25 25 0.8 0.69 10E-5 1.1 x 10E - 9 1.08 10 18 1.0 0.69 10E-5 0.3 x 10E - 8 1.08 10 9 0.7 0.69 10E-5 2.2 x 10E - 8 1.08 5 25 0.7 0.69 10E-5 7 x 1.0E-9 1.08 10 10 1.1 0.69 10E-5 10E-8 1.08 15 PB PT M V 0.6 2 0.5 0.6 2 0.5 0.6 2 0.5 0.56 2 0.5 0.64 2 0.5 0.64 2 0.5 Ω 3-54 Typical Parameters 1000 100 10 75 1,000 100°C 1 50°C 25°C 50 100 25 0°C 0.1 0 0.10 0.30 0.20 0.40 0.50 1 0.60 0 5 VF – FORWARD VOLTAGE (V) 0.8 0.6 5082-2900 5082-2303 0.2 0 4 8 12 16 5 +150°C 1 0.5 +100°C +50°C +25°C 0°C –50°C 0.1 0.05 1.5 1.0 0.5 20 30 40 100 75 1000 50 100 25 0 10 TA = °C 0.4 0.6 0.8 1.0 0 1.2 50 VR - REVERSE VOLTAGE (V) Figure 7. (5082-2800 or 1N5711) Typical Capacitance (CT) vs. Reverse Voltage (VR). 0.4 0.6 0.8 1.0 1.2 Figure 6. (5082-2800 OR 1N5711) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 10,000 10 +150°C 1.0 +100°C +50°C 0.1 +25°C 0°C –50°C 0.01 0.2 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) CT - CAPACITANCE (pF) 0.2 100 10 125 1 0 Figure 5. I-V Curve Showing Typical Temperature Variation for 5082-2800 or 1N5711 Schottky Diodes. 12.0 0 150 10,000 VR - REVERSE VOLTAGE (V) Figure 4. 5082-2300 and 5082-2900 Series Typical Capacitance vs. Reverse Voltage. 100 100,000 10 0.01 20 10 Figure 3. 5082-2300 Series and 5082-2900 Series Typical Dynamic Resistance (RD) vs. Forward Current (IF). IR - REVERSE CURRENT (nA) IF - FORWARD CURRENT (mA) CT - CAPACITANCE (pF) 1.0 0 IF - FORWARD CURRENT (mA) 50 0 10 0.01 15 Figure 2. 5082-2300 Series Typical Reverse Current vs. Reverse Voltage at Various Temperatures. 1.2 0.4 100 VBR (V) Figure 1. I-V Curve Showing Typical Temperature Variation for 5082-2300 and 5082-2900 Series Schottky Diodes. 0 10 IR - REVERSE CURRENT (nA) 0.01 TA = 25°C 10 –50°C RD - DYNAMIC RESISTANCE (Ω) 10.000 IR (nA) IF - FORWARD CURRENT (mA) 100 0 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (V) Figure 8. I-V Curve Showing Typical Temperature Variation for the 50822810 or 1N5712 Schottky Diode. 3-55 150 125 1000 100 75 50 100 25 TA = °C 10 1.0 0 5 10 15 20 25 30 VR - REVERSE VOLTAGE (V) Figure 9. (5082-2810 or IN5712) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. Typical Parameters, continued 100,000 150 10,000 10 1.0 +150°C +100°C +50°C +25°C 0°C 0.1 100 1000 100 0.2 0.4 0.6 0.8 1.0 25 TA = °C 10 –50°C 0 50 1 1.2 Figure 10. I-V Curve Showing Typical Temperature Variation for the 5082-2811 Schottky Diode. 15 20 25 +125°C +100°C 1000 +75°C +50°C +25°C 10 2 3 4 5 0 6 0.2 0.4 0.6 0.8 1.0 1.2 Figure 12. I-V Curve Showing Typical Temperature Variations for 5082-2835 Schottky Diode. 1000 1.0 0.8 5082-2810/2811 IN5712 0.6 5082-2835 0.4 0 1 +25°C +50°C +100°C +150°C VF - FORWARD VOLTAGE (V) 0.2 0 –50°C 0°C 0.1 30 1.2 CT - CAPACITANCE (pF) IR - REVERSE CURRENT (nA) 10 11.4 +150°C 1 5 Figure 11. (5082-2811) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 100,000 100 1.0 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) 10,000 10 0.01 0 RD - DYNAMIC RESISTANCE (Ω) 0.01 100 IF - FORWARD CURRENT (mA) IR - REVERSE CURRENT (nA) IF - FORWARD CURRENT (mA) 100 0 2 4 6 8 10 VR - REVERSE VOLTAGE (V) VR - REVERSE VOLTAGE (V) Figure 13. (5082-2835) Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. Figure 14. Typical Capacitance (CT) vs. Reverse Voltage (VR). Diode Package Marking HPX XXX YZZ where XXX are the last three digits of the 5082-XXXX part number, Y is the last digit of the calendar year, and ZZ is the work week of manufacture. For example, a 5082-2811 manufactured during the 35th work week of 1996 would be marked HP2 811 635 3-56 5082-2800, 1N5711 5082-2811 100 5082-2811 1N5712 10 5082-2835 1 0 2 4 6 8 10 IF - FORWARD CURRENT (mA) Figure 15. Typical Dynamic Resistance (RD) vs. Forward Current (IF).