IGBT IPM 1200V 6x75A 6MBP 75RA-120 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 75 150 75 595 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=75A -IC=75A Min. Typ. Max. 1.0 2.6 3.0 Units mA V V Min. 3 10 1.00 1.25 Typ. Max. 18 65 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Symbols ICCP ICCN Input Signal Threshold Voltage VIN(th) Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis VZ TCOH TCH TjOH TjH IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 1.60 8.0 110 150 Tj=125°C Tj=25°C 113 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 10 2 1500 1575 12.5 A µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=600V Min. 0.3 Typ. IF=50A, VDC=600V Max. Units 3.6 0.4 µs Max. 0.21 0.47 Units • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. 0.05 °C/W 6MBP 75RA-120 n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection IGBT IPM 1200V 6x75A IGBT IPM 1200V 6x75A 6MBP 75RA-120 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency T j=25°C V CC= 1 5 V N-Side V CC= 1 3 V 30 20 V C C= 1 7 V P-Side V C C= 1 5 V 10 V C C= 1 3 V V in(off) 1,5 V in(on) 1,0 0,5 0,0 12 0 0 5 10 15 20 T j=125°C 2,0 : V in(on) , V in(off) [V] 40 Input Signal Threshold Voltage [mA] 2,5 V CC= 1 7 V CC Power Supply Current : I vs. Power Supply Voltage T j=100°C 50 25 13 S w itching Frequency : fsw [kHz] 14 [V] H Under Voltage Hysterisis : V Under Voltage : V UV [V] 10 8 6 4 2 40 60 80 100 120 Junction Temperature : T j [°C] 0,4 0,2 0,0 20 140 40 60 80 100 120 Junction Temperature: Tj [°C] 140 Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 cH , T jH [°C] 200 Over Heating Protection : T [ms] 18 0,6 3,0 ALM 17 0,8 Alarm Hold Time vs. Power Supply Voltage Alarm Hold Timen : t 16 1,0 12 0,0 12 15 Under Voltage Hysterisis vs. Junction Temperature Under Voltage vs. Junction Temperature 0 20 14 Power Supply Voltage : V cc [V] T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 1200V 6x75A 6MBP 75RA-120 n Inverter Collector Current vs. Collector-Emitter Voltage C o llector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 150 50 100 50 0 0 1 2 3 0 4 1 2 3 4 C o llector-Em itter Voltage : V C E [V] Collector-Emitter Voltage : V C E [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V D C =600V, V C C =15V, T j =25°C V D C =600V, V C C =15V, T j =125°C , t r, t off , t f [ns] t off t on 1000 t off t on 1000 Switching Time : t on on , t r, t off , t f [ns] V C C =17V,15V, 13V [A] C 100 Collector Current : I Collector Current : I C [A] V C C =17V,15V, 13V 0 Switching Time : t T j=125°C 150 tf 100 tf 100 10 0 20 40 60 80 100 120 140 0 20 Collector Current : I C [A] , E off , E rr [mJ/cycle] 25°C 100 120 140 30 E on 25 20 on 60 Switching Loss : E F [A] 100 Forward Current : I 80 V D C =600V, V C C =15V, T j=125°C 35 80 60 Switching Loss vs. Collector Current Forward Voltage vs. Forward Current 120 T j=125°C 40 Collector Current : I C [A] 40 20 0 0 1 2 Forward Voltage : V F [V] 3 4 15 E off 10 5 E rr 0 0 20 40 60 80 100 120 140 IGBT IPM 1200V 6x75A 6MBP 75RA-120 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance V CC =15V, T j<125°C 900 SCSOA FWD 0 [A] 10 (non-repetitive pulse) 750 10 10 Collector Current : I Thermal Resistance : R C th(j-c) [°C/W] 1050 IGBT -1 600 450 RBSOA 300 150 0 -2 10 (repetitive pulse) -3 10 -2 10 -1 10 0 0 200 Pulse Width : P W [sec] 400 1400 [W] [W] C C 150 Collector Power Dissipation : P Collector Power Dissipation : P 1200 (per device) 200 400 300 200 100 0 0 20 40 60 80 100 120 140 100 50 0 160 0 20 V D C =600V, V C C =15V, T j=25°C , E off , E rr [mJ/cycle] 25 on 20 Switching Loss : E 15 10 E off 5 E rr 0 40 60 80 100 Collector Current : I C [A] 100 120 140 160 120 30 E on 25 20 on E on 20 80 V D C =300V, V C C =15V, T j=125°C 35 30 0 60 Switching Loss vs. Collector Current S w itching Loss vs. Collector Current 35 40 Case Temperature : T C (°C) Case Temperature : T C (°C) , E off , E rr [mJ/cycle] 1000 Power Derating For FWD (per device) 500 Switching Loss : E 800 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT 600 600 140 15 E off 10 5 E rr 0 0 20 40 60 80 100 120 140 6MBP 75RA-120 IGBT IPM 1200V 6x75A n Inverter V cc =15 V 300 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 440g Specification is subject to change without notice October 98