7MBP 100RA-120 IGBT IPM 1200V 6x100A+Chopper Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode One Transistor Collector Power Dissi. DB Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 100 200 100 735 50 100 50 400 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV DB Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=100A -IC=100A VCE=1200V, Input Terminal Open IC=50A -IC=50A Min. Typ. Max. 1.0 2.6 3.0 1.0 2.6 3.3 Units mA V V mA V V Min. 3 10 1.00 1.70 Typ. Max. 18 65 1.70 2.40 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 2.05 8.0 110 150 Tj=125°C Tj=125°C Tj=25°C 150 75 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 A 10 2 1500 1575 12.5 µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=100A, VDC=600V IF=100A, VDC=600V Min. 0.3 Typ. Max. Units 3.6 0.4 µs 7MBP 100RA-120 IGBT IPM 1200V 6x100A+Chopper • Thermal Characteristics Items Thermal Resistance n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 Max. 0.17 0.36 0.31 Units °C/W IGBT IPM 1200V 6x100A+Chopper 7MBP 100RA-120 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C Collector Current : I Collector Current : I V C C =17V,15V, 13V 80 C [A] V C C =17V,15V, 13V 80 T j=125°C 100 C [A] 100 60 40 20 0 0,0 0,5 1,0 1,5 2,0 2,5 Collector-Emitter Voltage : V CE [V] 60 40 20 0 0,0 3,0 1,0 [°C/W] th(j-c) 3,0 SCSOA (non-repetitive pulse) 500 C [A] IGBT 10 Collector Current : I Thermal Resistance : R 2,5 V C C =15V, T j<125°C 600 10 -1 400 300 200 RBSOA (repetitive pulse) 100 -2 10 -3 10 -2 10 -1 10 0 0 0 200 Pulse Width : P W [sec] 400 800 1000 1200 1400 Over Current Protection vs. Junction Temperature (per device) 500 600 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT V cc =15 V [A] 200 oc [W] 400 Over Current Protection Level : I C 2,0 Reverse Biased Safe Operating Area 0 700 Collector Power Dissipation : P 1,5 Collector-Emitter Voltage : V CE [V] Transient Thermal Resistance 10 0,5 300 200 100 0 0 20 40 60 80 100 120 C a s e T e m p e r a t u r e : T C [°C] 140 160 150 100 50 0 0 20 40 60 80 100 Junction Temperature: T j [°C] 120 140 7MBP 100RA-120 IGBT IPM 1200V 6x100A+Chopper n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency vs. Power Supply Voltage T j=100°C 70 3,0 V C C =17V V C C =15V 50 V C C =13V 40 30 V C C =17V 20 P-Side V C C =15V V C C =13V 10 V in(off) 1,5 5 10 15 20 Switching Frequency : fsw [kHz] 0,5 0,0 12 25 [V] H Under Voltage Hysterisis : V UV [V] 10 8 6 4 2 18 40 60 80 100 120 0,4 0,2 0,0 20 140 40 60 80 100 120 140 Junction Temperature: T j [°C] Over Heating Characteristics T cOH, T jOH , T cH , T jH vs. V cc 3,0 , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 , T jH [°C] cH 200 Over Heating Protection : T [ms] 17 0,6 Alarm Hold Time vs. Power Supply Voltage ALM 16 0,8 Junction Temperature : T j [°C] Alarm Hold Timen : t 15 1,0 12 0,0 12 14 Under Voltage Hysterisis vs. Junction Temperature 14 Under Voltage : V 13 Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 0 20 V in(on) 1,0 0 0 T j=125°C 2,0 : V in(on) , V in(off) [V] N-Side 2,5 Input Signal Threshold Voltage Power Supply Current : I CC [mA] T j=25°C 60 T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 1200V 6x100A+Chopper 7MBP 100RA-120 n Inverter Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C [A] V C C =17V,15V, 13V Collector Current : I Collector Current : I 100 50 100 50 0 1 2 3 Collector-Emitter Voltage : V CE [V] 0 4 3 4 Switching Time vs. Collector Current V D C= 6 0 0 V , V C C= 1 5 V , T j= 2 5 ° C V D C= 6 0 0 V , V C C= 1 5 V , T j= 2 5 ° C t off t off 1000 on 100 Switching Time : t on 1000 t on tf 20 40 60 80 100 120 140 100 160 tf 0 Collector Current : I C [A] 20 40 60 80 100 120 140 160 Collector Current : I C [A] Switching Time vs. Collector Current Forward Voltage vs. Forward Current 200 V DC =600V, V CC =15V, T j= 1 2 5 ° C [A] t off 150 F t on Forward Current : I 1000 tf on , t r, t off , t f [ns] 2 Switching Time vs. Collector Current t on 0 Switching Time : t 1 Collector-Emitter Voltage : V C E [V] , t r, t off , t f [ns] 0 , t r, t off , t f [ns] V C C =17V,15V, 13V 150 C 150 0 Switching Time : t T j=125°C 200 C [A] 200 25°C T j=125°C 100 50 100 0 0 20 40 60 80 100 Collector Current : I C [A] 120 140 160 0 1 2 Forward Voltage : V F [V] 3 4 IGBT IPM 1200V 6x100A+Chopper 7MBP 100RA-120 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance V CC =15V, T j<125°C 1400 0 [°C/W] 10 [A] th(j-c) 1200 10 C -1 IGBT 10 1000 Collector Current : I Thermal Resistance : R FWD 800 600 400 RBSOA (repetitive pulse) 200 -2 10 SCSOA (non-repetitive pulse) 0 -3 10 -2 10 -1 10 0 0 200 Pulse Width : P W [sec] 400 800 1000 1200 1400 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT Power Derating For FWD (per device) (per device) 400 C Collector Power Dissipation : P 400 200 0 0 20 60 80 100 120 140 100 0 160 0 60 80 100 120 Switching Loss vs. Collector Current Switching Loss vs. Collector Current E off E rr 0 40 60 80 100 120 Collector Current : I C [A] 140 160 30 20 140 160 V D C =600V, V C C =15V, T j=125°C 40 10 20 40 Case Temperature : T C (°C) E on 0 20 Case Temperature : T C (°C) , E off , E rr [mJ/cycle] , E off , E rr [mJ/cycle] on Switching Loss : E 20 40 200 V D C = 6 0 0 V , V C C = 1 5 V , T j= 2 5 ° C 40 30 300 on Collector Power Dissipation : P 600 Switching Loss : E C [W] [W] 800 600 E on E off E rr 10 0 0 20 40 60 80 100 120 140 160 7MBP 100RA-120 IGBT IPM 1200V 6x100A+Chopper n Inverter Over Current Protection Level : I oc [A] Over Current Protection vs. Junction Temperature V cc =15 V 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 920g Specification is subject to change without notice October 98