ETC 7MBP200RA-060

7MBP 200RA-060
IGBT IPM
600V
6×200A+Chopper
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Continuous
Collector
1ms
Current
Duty=58.8%
Collector Power Dissipation One Transistor
Dynamic Brake
Continuous
Collector Current
1ms
Forward Current of Diode
One Transistor
Collector Power Dissi. DB
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
Screw Torque
( Tc=25°C)
Symbols
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
VIN
IIN
VALM
IALM
Tj
TOP
Tstg
Viso
Mounting *1
Terminals *1
Ratings
Max.
450
500
400
600
200
400
200
735
75
150
75
320
0
20
0
VZ
1
0
VCC
15
150
-20
100
-40
125
2500
3.5
3.5
n Outline Drawing
Units
Min.
0
0
200
0
V
A
W
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
INV
DB
Items
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=200A
-IC=200A
VCE=600V, Input Terminal Open
IC=75A
-IC=75A
Min.
Typ.
Max.
1.0
2.8
3.0
1.0
2.8
3.3
Units
mA
V
V
mA
V
V
Min.
6
24
1.00
1.70
Typ.
Max.
32
114
1.70
2.40
Units
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
DB Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
Symbols
ICCP
ICCN
VIN(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
tALM
RALM
VUV
VH
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
1.35
2.05
8.0
110
150
Tj=125°C
Tj=125°C
Tj=25°C
300
113
V
125
20
Surface of IGBT Chip
mA
°C
20
1.5
1425
11.0
0.2
A
10
2
1500
1575
12.5
µs
ms
Ω
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Switching Time
Symbols
tON
tOFF
tRR
Conditions
IC=200A, VDC=300V
IF=200A, VDC=300V
Min.
0.3
Typ.
Max.
Units
3.6
0.4
µs
7MBP 200RA-060
IGBT IPM
600V
6×200A+Chopper
• Thermal Characteristics
Items
Thermal Resistance
n Equivalent Circuit
Drivers include following functions
À Short circuit protection circuit
Á Amplifier for driver
 Undervoltage protection circuit
à Overcurrent protection circuit
Ä IGBT Chip overheating protection
Symbols
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
DB IGBT
With Thermal Compound
Min.
Typ.
0.05
Max.
0.17
0.36
0.39
Units
°C/W
IGBT IPM
600V
6×200A+Chopper
7MBP 200RA-060
n Dynamic Brake
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j=25°C
140
V C C =17V,15V, 13V
V C C =17V,15V, 13V
[A]
120
C
100
Collector Current : I
Collector Current : I
C
[A]
120
T j=125°C
140
80
60
40
20
100
80
60
40
20
0
0
0
1
2
3
Collector-Emitter Voltage : V C E [V]
4
0
10
SCSOA
(non-repetitive pulse)
[A]
C
IGBT
10
450
Collector Current : I
Thermal Resistance : R
V C C =15V, T j<125°C
750
0
600
10
-1
300
150
RBSOA
(repetitive pulse)
-2
10
-3
10
-2
10
-1
10
0
0
0
100
Pulse Width : P W [sec]
200
400
500
600
700
Over Current Protection vs. Junction Temperature
(per device)
350
300
Collector-Emitter Voltage : V CE [V]
Power Derating For IGBT
V cc =15 V
[A]
200
180
oc
300
C
[W]
4
Reverse Biased Safe Operating Area
th(j-c)
[°C/W]
Transient Thermal Resistance
1
2
3
Collector-Emitter Voltage : V C E [V]
Over Current Protection Level : I
Collector Power Dissipation : P
160
250
200
150
100
50
0
0
20
40
60
80
100
120
C a s e T e m p e r a t u r e : T C [°C]
140
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
Junction Temperature: T j [°C]
120
140
7MBP 200RA-060
IGBT IPM
600V
6×200A+Chopper
n Control Circuit
Input Signal Threshold Voltage
Power Supply Current vs. Switching Frequency
4,0
V C C =17V
N-Side
T j =125°C
V C C =15V
60
V C C =13V
50
40
30
V C C =17V
P-Side
V C C =15V
20
V C C =13V
10
3,0
V in(off)
2,5
2,0
1,5
5
10
15
20
Switching Frequency : fsw [kHz]
0,5
0,0
12
25
[V]
H
Under Voltage Hysterisis : V
UV
[V]
10
8
6
4
2
18
40
60
80
100
120
0,4
0,2
0,0
20
140
40
60
80
100
120
140
Junction Temperature: T j [°C]
Over Heating Characteristics
T cOH, T jOH , T cH , T jH vs. V cc
3,0
, T jOH [°C]
cOH
T j=125°C
2,0
T j=25°C
1,5
1,0
0,5
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
Over Heating Hysterisis : T
2,5
, T jH [°C]
cH
200
Over Heating Protection : T
[ms]
17
0,6
Alarm Hold Time vs. Power Supply Voltage
ALM
16
0,8
Junction Temperature : T j [°C]
Alarm Hold Timen : t
15
1,0
12
0,0
12
14
Under Voltage Hysterisis vs. Junction Temperature
14
Under Voltage : V
13
Power Supply Voltage : V cc [V]
Under Voltage vs. Junction Temperature
0
20
V in(on)
1,0
0
0
T j=25°C
3,5
: V in(on) , V in(off) [V]
70
Input Signal Threshold Voltage
[mA]
CC
Power Supply Current : I
vs. Power Supply Voltage
T j=100°C
80
T jOH
150
T cOH
100
50
T cH ,T jH
0
12
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
IGBT IPM
600V
6×200A+Chopper
7MBP 200RA-060
n Inverter
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j=25°C
400
350
[A]
V C C =17V,15V, 13V
250
Collector Current : I
Collector Current : I
V C C =17V,15V, 13V
300
C
300
C
[A]
350
200
150
100
50
250
200
150
100
50
0
0
1
2
3
Collector-Emitter Voltage : V CE [V]
4
0
1
2
3
Collector-Emitter Voltage : V CE [V]
Switching Time vs. Collector Current
V D C = 3 0 0 V , V C C=15V, T j = 2 5 ° C
V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [ns]
Switching Time vs. Collector Current
t off
t on
1000
Switching Time : t
tf
100
0
t off
t on
1000
50
100
150
200
250
300
tf
100
350
0
50
Collector Current : I C [A]
100
150
200
250
350
Reverse Recovery Characteristics
Forward Voltage vs. Forward Current
trr , Irr vs. I F
rr
T j=125°C 25°C
trr=125°C
250
200
150
100
50
Reverse Recovery Time : t
Reverse Recovery Current : I
F
rr
300
[ns]
[A]
350
[A]
300
Collector Current : I C [A]
400
Forward Current : I
4
on
on
, t r, t off , t f [ns]
0
Switching Time : t
T j=125°C
400
trr=25°C
100
I rr=125°C
I rr=25°C
10
0
0
1
2
Forward Voltage : V F [V]
3
4
0
50
100
150
200
250
300
Forward Current : I F [A]
350
400
IGBT IPM
600V
6×200A+Chopper
7MBP 200RA-060
n Inverter
Reverse Biased Safe Operating Area
Transient Thermal Resistance
10
V C C =15V, T j<125°C
2000
0
SCSOA
Thermal Resistance : Rth(j-c) [°C/W]
1800
(non-repetitive pulse)
[A]
1600
IGBT
-1
1200
Collector Current : I
10
1400
C
FWD
1000
800
600
400
RBSOA
200
10
-2
10
0
-3
10
-2
10
0
-1
600
[W]
300
Collector Power Dissipation : P
300
200
100
0
40
60
80
100
120
140
250
200
150
100
50
0
160
0
20
40
60
80
100
120
140
Case Temperature : T C (°C)
Case Temperature : T C (°C)
Switching Loss vs. Collector Current
Switching Loss vs. Collector Current
V D C =300V, V C C =15V, T j=125°C
, E off , E rr [mJ/cycle]
E on
20
on
E off
Switching Loss : E
15
10
5
E rr
0
160
V D C =300V, V C C =15V, T j=125°C
30
25
700
350
C
[W]
C
Collector Power Dissipation : P
400
, E off , E rr [mJ/cycle]
500
(per device)
400
500
on
400
Power Derating For FWD
600
Switching Loss : E
300
Power Derating For IGBT
700
30
200
Collector-Emitter Voltage : V CE [V]
800
20
100
Pulse Width : P W [sec]
(per device)
0
(repetitive pulse)
E on
25
20
E off
15
10
5
E rr
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
7MBP 200RA-060
IGBT IPM
600V
6×200A+Chopper
n Inverter
Over Current Protection Level : I
oc
[A]
Over Current Protection vs. Junction Temperature
V cc =15 V
500
450
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
Junction Temperature: T j [°C]
n Outline Drawing
Weight: 920g
Specification is subject to change without notice
October 98