FUJI 6MBP150RA-060

IGBT IPM
600V
6×150A
6MBP 150RA-060
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Continuous
Collector
1ms
Current
Duty=58.8%
Collector Power Dissipation One Transistor
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
Screw Torque
( Tc=25°C)
Symbols
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
VCC *1
VIN *2
IIN
VALM *3
IALM *4
Tj
TOP
Tstg
Viso
Mounting *1
Terminals *1
Ratings
Max.
450
500
400
600
150
300
150
595
0
20
0
VZ
1
0
VCC
15
150
-20
100
-40
125
2500
3.5
3.5
n Outline Drawing
Units
Min.
0
0
200
0
V
A
W
V
mA
V
mA
°C
V
Nm
Fig. 1
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
INV
Items
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=150A
-IC=150A
Min.
Typ.
Max.
1.0
2.8
3.0
Units
mA
V
V
Min.
3
10
1.00
1.25
Typ.
Max.
18
65
1.70
1.95
Units
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
Symbols
ICCP
ICCN
VIN(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
tALM
RALM
VUV
VH
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
1.35
1.60
8.0
110
150
Tj=125°C
Tj=25°C
225
V
125
20
Surface of IGBT Chip
mA
°C
20
1.5
1425
11.0
0.2
10
2
1500
1575
12.5
A
µs
ms
Ω
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Switching Time
Symbols
tON
tOFF
tRR
Conditions
IC=150A, VDC=300V
Min.
0.3
Typ.
IF=150A, VDC=300V
Max.
Units
3.6
0.4
µs
Max.
0.21
0.47
Units
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
°C/W
6MBP 150RA-060
n Equivalent Circuit
Drivers include following functions
À Short circuit protection circuit
Á Amplifier for driver
 Undervoltage protection circuit
à Overcurrent protection circuit
Ä IGBT Chip overheating protection
IGBT IPM
600V
6×150A
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Control Circuit
Input Signal Threshold Voltage
Power Supply Current vs. Switching Frequency
vs. Power Supply Voltage
T j= 1 0 0 ° C
40
2,5
T j= 2 5 ° C
T j= 1 2 5 ° C
V CC= 1 5 V
V CC= 1 3 V
30
25
20
V C C= 1 7 V
15
V C C= 1 5 V
P-Side
10
V C C= 1 3 V
5
2,0
: V in(on) , V in(off) [V]
N-Side
Input Signal Threshold Voltage
Power Supply Current : I
CC
[mA]
V CC= 1 7 V
35
5
10
15
20
V in(on)
1,0
0,5
0,0
12
0
0
V in(off)
1,5
25
13
Switching Frequency : fsw [kHz]
H
Under Voltage Hysterisis : V
Under Voltage : V
UV
[V]
10
8
6
4
2
40
60
80
100
120
0,6
0,4
0,2
0,0
20
140
40
60
80
100
120
140
Junction Temperature: T j [°C]
Over Heating Characteristics
Alarm Hold Time vs. Power Supply Voltage
T cOH , T jOH , T cH, T jH vs. V cc
3,0
, T jOH [°C]
cOH
T j= 1 0 0 ° C
2,0
T j= 2 5 ° C
1,5
1,0
0,5
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
Over Heating Hysterisis : T
2,5
, T jH [°C]
cH
200
Over Heating Protection : T
[ms]
18
0,8
Junction Temperature : T j [°C]
ALM
17
[V]
12
Alarm Hold Timen : t
16
1,0
14
0,0
12
15
Under Voltage Hysterisis vs. Junction Temperature
Under Voltage vs. Junction Temperature
0
20
14
Power Supply Voltage : V cc [V]
T jOH
150
T cOH
100
50
T cH ,T jH
0
12
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Inverter
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
300
250
200
Collector Current : I
200
150
100
50
150
100
50
0
0
1
2
3
0
4
1
2
3
4
Collector-Emitter Voltage : V CE [V]
Switching Time vs. Collector Current
Switching Time vs. Collector Current
V DC =300V, V CC =15V, T j= 2 5 ° C
V D C= 3 0 0 V , V C C=15V, T j= 1 2 5 ° C
, t r, t off , t f [ns]
Collector-Emitter Voltage : V CE [V]
t on
t off
t off
ton
1000
Switching Time : t
on
1000
on
, t r, t off , t f [ns]
V C C =17V,15V, 13V
[A]
C
[A]
C
Collector Current : I
250
V C C=17V,15V, 13V
0
Switching Time : t
T j= 1 2 5 ° C
300
tf
100
0
50
100
150
200
tf
100
250
0
50
Collector Current : I C [A]
100
150
200
250
Collector Current : I C [A]
Reverse Recovery Characteristics
Forward Voltage vs. Forward Current
t rr , I rr vs. I F
300
100
t rr = 2 5 ° C
200
150
100
50
Reverse Recovery Time : t
Reverse Recovery Current : I
rr
rr
T j= 1 2 5 ° C 2 5 ° C
[A]
F
Forward Current : I
[A]
250
[ns]
trr = 1 2 5 ° C
I rr = 1 2 5 ° C
I rr= 1 2 5 ° C
10
0
0
1
2
Forward Voltage : V F [V]
3
4
0
50
100
150
Forward Current : I F [A]
200
250
IGBT IPM
600V
6×150A
6MBP 150RA-060
Reverse Biased Safe Operating Area
Transient Thermal Resistance
V C C = 1 5 V , T j< 1 2 5 ° C
1500
Thermal Resistance : Rth(j-c) [°C/W]
10
0
1350
[A]
1200
C
1050
10
-1
900
Collector Current : I
FWD
IGBT
750
600
450
300
150
10
0
-2
10
-3
10
-2
10
-1
10
0
0
100
Pulse Width : P W [sec]
200
500
600
700
140
160
Power Derating For FWD
(per device)
(per device)
300
250
C
C
[W]
600
[W]
400
Collector-Emitter Voltage : V CE [V]
Power Derating For IGBT
700
300
Collector Power Dissipation : P
400
300
200
100
0
0
20
40
80
100
120
100
50
0
160
0
20
40
80
100
120
Switching Loss vs. Collector Current
Switching Loss vs. Collector Current
V DC =300V, V CC =15V, T j= 2 5 ° C
V DC =300V, V CC =15V, T j = 1 2 5 ° C
30
E on
10
E off
on
Switching Loss : E
5
E rr
0
0
60
C a s e T e m p e r a t u r e : T C (°C)
on
Switching Loss : E
140
150
C a s e T e m p e r a t u r e : T C (°C)
15
, E off , E rr [mJ/cycle]
60
200
, E off , E rr [mJ/cycle]
Collector Power Dissipation : P
500
50
100
150
Collector Current : I C [A]
200
250
E on
25
20
E off
15
10
5
E rr
0
0
50
100
150
200
250
6MBP 150RA-060
V cc = 1 5 V
420
oc
[A]
Over Current Protection vs. Junction Temperature
Over Current Protection Level : I
360
300
240
180
120
60
0
0
20
40
60
80
100
Junction Temperature: T j [°C]
120
140
IGBT IPM
600V
6×150A
6MBP 150RA-060
IGBT IPM
600V
6×150A
n Outline Drawing
Weight: 440g
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com