SSTA56 / MMSTA56 / MPSA56 Transistors PNP General Purpose Transistor SSTA56 / MMSTA56 / MPSA56 !External dimensions (Units : mm) !Features 1) BVCEO < −40V (IC = −1mA) 2) Complements the SSTA06 / MMSTA06 / MPSA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 SSTA56 MMSTA56 MPSA56 Packaging type SST3 R2G SMT3 R2G TO-92 - T116 T146 T93 3000 3000 3000 Marking Code Basic ordering unit (pieces) 0~0.1 0.2Min. (3) ROHM : SST3 All terminals have same dimensions MMSTA56 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power SSTA56, MMSTA56 dissipation MPSA56 Junction temperature VCBO VCEO VEBO IC Unit −80 −80 −4 −0.5 Tstg +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector W 0.625 150 Tj 0~0.1 (3) V V V A 0.2 PC 0.2 1.6 + −0.1 Limits °C °C −55~+150 4.8±0.2 MPSA56 3.7±0.2 (12.7Min.) 2.5Min. 4.8±0.2 Storage temperature Symbol (2) (1) 2.8±0.2 !Absolute maximum ratings (Ta = 25°C) Parameter (1) Emitter (2) Base (3) Collector +0.1 0.15 −0.06 0.4 +0.1 −0.05 0.3~0.6 Part No. 0.2 1.3 + −0.1 !Package, marking and packaging specifications 2.4±0.2 (2) (1) 0.5±0.1 (1) ROHM : TO-92 EIAJ : SC-43 (2) (3) 0.3 2.5 + −0.1 5 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO −4 −80 - - V V ICBO - - −0.1 −1 µA - - −0.25 V IC/IB = −100mA/−10mA - - −1.2 V 100 - - VCE/IB = −1V/−100mA VCE = −1V , IC = −10mA 100 - - 50 - - Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage ICEO VCE(sat) VBE(on) DC current transfer ratio hFE Transition frequency fT MHz Conditions IC = −100µA IC = −1mA VCB = −80V VCE = −60V VCE = −1V , IC = −100mA VCE = −1V , IE = 100mA , f = 100MHz 0.45 ±0.1 2.3 (1) Emitter (2) Base (3) Collector SSTA56 / MMSTA56 / MPSA56 Transistors !Electrical characteristic curves 1000 A 2.5m 2.0mA 300 1.5mA 1.0mA 200 0.5mA 100 Ta=125°C 25°C −40°C 1 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.3 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 Collector emitter saturation voltage vs. collector current Ta=25°C f=1MHz 100 1 Cib 1.8 Ta=25°C IC / IB=10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 1000 IC-COLLECTOR CURRENT (mA) 1000 Ta=25°C VCE=10V Cob 5 0.5 1 10 REVERSE BIAS VOLTAGE (V) Fig.7 Input/output capecitance vs. voltage 50 10 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.8 Gain bandwidth product vs. collector current 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current ( ΙΙ ) 1.8 VCE=3V 1.6 1.4 1.2 1.0 Ta=−40°C 0.8 25°C 0.6 125°C 0.4 0.2 0 1 100 10 25°C −40°C 10 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.5 Base-emitter saturation voltage vs. collector current CURRENT GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 500 VCE=3V 100 1V Fig.2 DC current gain vs. collector current ( Ι ) IC / IB=10 0.1 3V 10 Fig.1 Grounded emitter output characteristics 0.2 1000 Ta=125°C VCC=5V 100 IB=0mA 0 0 2.0 0.4 0.8 1.2 1.6 VCE-COLLECTOR-EMITTER VOLTAGE (V) 0 Ta=25°C A 5.0m VBE(ON)BASE EMITTER VOLTAGE (V) 400 4.5mA 4.0mA 3.5mA 3.0mA hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) Ta=25°C hFE-DC CURRENT GAIN 500 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.6 Grounded emitter propagation characteristics