ETC HAT2108R

HAT2108R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-1574C (Z)
4th. Edition
Aug. 2002
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2108R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
28
V
Gate to source voltage
VGSS
±12
V
Drain current
ID
11
A
88
A
Drain peak current
ID(pulse)
Note1
Body–drain diode reverse drain current IDR
11
A
Channel dissipation
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Rev.3, Aug. 2002, page 2 of 5
HAT2108R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
28
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 12
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±10 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 28 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
12
15
mΩ
ID = 5.5 A, VGS = 4 V
resistance
RDS(on)
—
15
22
mΩ
ID = 5.5 A, VGS = 2.5 V
Forward transfer admittance
|yfs|
17
28
—
S
ID = 5.5 A, VDS = 10 V
Input capacitance
Ciss
—
2200
—
pF
VDS = 10 V
Output capacitance
Coss
—
400
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
240
—
pF
f = 1 MHz
Total gate charge
Qg
—
16
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
5.2
—
nc
VGS = 4 V
Gate to drain charge
Qgd
—
4.8
—
nc
ID = 11 A
Turn-on delay time
td(on)
—
30
—
ns
VGS = 4 A, ID = 5.5 A
Rise time
tr
—
35
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
70
—
ns
RL = 1.81 Ω
Fall time
tf
—
25
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.85
1.11
V
IF = 11 A, VGS = 0
—
40
—
ns
IF = 11 A, VGS = 0
diF/ dt = 50 A/µs
Body–drain diode reverse recovery trr
time
Note4
Note4
Note4
Note4
Notes: 4. Pulse test
Rev.3, Aug. 2002, page 3 of 5
HAT2108R
Package Dimensions
As of January, 2002
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Rev.3, Aug. 2002, page 4 of 5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
HAT2108R
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-6538-6533/6538-8577
Fax : <65>-6538-6933/6538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-2735-9218
Fax : <852>-2730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, Aug. 2002, page 5 of 5