HTT1129E Silicon NPN Epitaxial Twin Transistor ADE-208-1541A (Z) Rev.1 Jan. 2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5849 2SC5872 Outline EMFPAK-6 Pin Arrangement 6 5 B1 6 4 E2 5 Q2 Q1 1 2 3 C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 Note: Mark is “Z”. B2 4 E1 2 C2 3 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1129E Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 15 15 V Collector to emitter voltage VCEO 6 6 V Emitter to base voltage VEBO 1.5 0.8 V Collector current IC 80 50 mA 150 150 °C –55 to +150 –50 to +150 °C Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Total 200* *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 200 *Value on PCB. (FR–4 (13 x13 x 0.635 mm)) 2 devices total 150 100 50 0 50 100 Ambient temperature Rev.1, Jan. 2003, page 2 of 9 150 Ta (°C) 200 mW HTT1129E Q1 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown V(BR)CBO voltage 15 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µA VCE = 6 V, RBE = infinite Emitter cutoff current IEBO 0.1 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.50 0.65 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product fT 2 4 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient |S21|2 7 11 dB Noise figure NF 1.7 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Min Typ Max Unit Test Condition Collector to base breakdown V(BR)CBO voltage 16 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µA VCE = 6 V, RBE = infinite Emitter cutoff current IEBO 0.1 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.25 0.35 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product fT 8 10 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient |S21|2 13 16 dB Noise figure NF 1.0 1.6 dB VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω Q2 Electrical Characteristics (Ta = 25°C) Item Symbol Rev.1,Jan. 2003, page 3 of 9 HTT1129E Q1 Main Characteristics Typical Forward Transfer Characteristics Typical Output Characteristics 25 160 µA 180 µA VCE = 1 V Collector Current IC (mA) 140 µA 16 120 µA 100 µA 12 80 µA 8 60 µA 40 µA 4 IB = 20 µA 1 0 2 3 4 5 Collector to Emitter Voltage 6 DC Current Transfer Ratio hFE 200 VCE = 1 V 100 1.0 Collector Current Rev.1, Jan. 2003, page 4 of 9 15 10 5 0 10 IC (mA) 0.2 0.4 0.6 Base to Emitter Voltage 0.8 1.0 VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage DC Current Transfer Ratio vs. Collector Current 0 0.1 20 VCE (V) 100 Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) 20 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 Collector to Base Voltage VCB (V) HTT1129E Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 1 V f = 900 MHz 16 NF (dB) 4 VCE = 3 V 12 VCE = 2 V Noise Figure Gain Bandwidth Product fT (GHz) f = 1 GHz 8 4 3 2 1 VCE = 1 V 0 1 2 5 10 20 50 100 Collector Current IC (mA) 0 1 2 5 10 20 50 100 Collector Current IC (mA) S21 Parameter vs. Collector Current 20 S21 Parameter |S21|2 (dB) f = 1 GHz 16 VCE = 2 V 12 VCE = 1 V 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.1,Jan. 2003, page 5 of 9 HTT1129E Q2 Main Characteristics Typical Output Characteristics 160 µA Typical Forward Transfer Characteristics 50 8 (mA) 12 120 µA 100 µA IC 16 80 µA 60 µA 40 µA 4 IB = 20 µA 1 0 2 3 4 5 Collector to Emitter Voltage DC Current Transfer Ratio hFE 100 Rev.1, Jan. 2003, page 6 of 9 20 10 10 IC (mA) 0.2 0.4 0.6 Base to Emitter Voltage 0.8 1.0 VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage VCE = 1 V Collector Current 30 VCE (V) 200 1.0 40 0 6 DC Current Transfer Ratio vs. Collector Current 0 0.1 VCE = 1 V Collector Current 140 µA 100 Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) 20 0.4 Emitter ground f = 1 MHz 0.3 0.2 0.1 0 0.5 1.0 Collector to Base Voltage 1.5 2.0 VCB (V) HTT1129E Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 8 7 f = 1 GHz Noise Figure NF (dB) Gain Bandwidth Product fT (GHz) 20 16 VCE = 3 V 12 8 4 VCE = 1 V 6 VCE = 2 V 5 4 3 2 VCE = 3 V 1 VCE = 1 V 0 1 f = 900 MHz 2 5 10 Collector Current 20 50 100 0 1 2 5 10 Collector Current IC (mA) 20 50 100 IC (mA) S21 Parameter vs. Collector Current 20 (dB) 12 S21 Parameter 16 |S21|2 f = 900MHz VCE = 3 V 8 VCE = 1 V 4 0 1 2 5 10 Collector Current 20 50 100 IC (mA) Rev.1,Jan. 2003, page 7 of 9 HTT1129E Package Dimensions As of July, 2002 Unit: mm +0.1 0.15–0.05 (0.4) (0.2) (0.1) 0.8 ± 0.1 1.0 ± 0.05 (0.1) +0.1 6-0.15 –0.05 (0.2) 1.2 ± 0.05 (0.4) 0.5 Max 0.8 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) Rev.1, Jan. 2003, page 8 of 9 EMFPAK-6 — — 0.0012 g HTT1129E Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan. Colophon 7.0 Rev.1,Jan. 2003, page 9 of 9