2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features • High power gain low noise figure at low power operation: 2 |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 Note: Marking is “WB–“. 1. Emitter 2. Base 3. Collector 2SC5700 Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Value Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 4 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation Pc 80 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 1 µA VCE = 4 V, RBE = Infinite Emitter cutoff current IEBO 200 nA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 100 130 170 VCE = 1 V, IC = 5 mA Collector output capacitance Cob 0.4 0.7 pF VCB = 1 V, IE = 0, f = 1 MHz Gain bandwidth product fT 10 12 GHz VCE = 1V, IC = 5 mA 2 Forward transmission coefficient |S21| 13 16 dB VCE = 1 V, IC = 5 mA, f = 900 MHz Noise figure NF 1.0 1.7 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 ohm Rev.0, Jun. 2001, page 2 of 10 2SC5700 Typical Output Characteristics 100 60 40 20 50 100 150 A 40 300 µA 250 µA 200 µA 150 µA 20 100 µA 10 IB = 50 µA 0 200 1 Ta (°C) 2 3 4 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 200 50 VCE = 1 V hFE VCE = 1 V 40 DC Current Transfer Ratio IC (mA) 350 µA 30 Ambient Temperature Collector Current 400 µA 50 0µ I C (mA) 80 0 450 µA 50 Collector Current Collector Power Dissipation Pc (mW) Collector Power Dissipation Curve 30 20 10 100 0 0 0.2 0.4 0.6 Base to Emitter Voltage 0.8 VBE (V) 1 1 2 5 10 Collector Current 20 50 100 IC (mA) Rev.0, Jun. 2001, page 3 of 10 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 20 1.0 fT (GHz) IE = 0 f = 1 MHz 0.8 Gain Bandwidth Product Collector Output Capacitance Cob (pF) 2SC5700 0.6 0.4 0.2 VCE = 1 V f = 2 GHz 16 12 8 4 0 0 0.4 1.2 0.8 1.6 1 2.0 2 S21 Parameter vs. Collector Current 20 50 100 S21 Parameter vs. Collector Current 20 20 | S21 |2 (dB) VCE = 1V f = 2 GHz 16 12 S21 Parameter | S21 |2 (dB) 10 Collector Current IC (mA) Collector to Base Voltage VCB (V) S21 Parameter 5 8 4 0 16 12 8 VCE = 1 V f = 900 MHz 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.0, Jun. 2001, page 4 of 10 100 1 2 5 10 Collector Current 20 50 IC (mA) 100 2SC5700 Noise Figure vs. Collector Current 5 Noise Figure NF (dB) VCE = 1 V f = 900 MHz 4 3 2 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.0, Jun. 2001, page 5 of 10 2SC5700 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 8 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -60° -120° -1.5 -90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. S22 Parameter vs. Frequency 90° .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Rev.0, Jun. 2001, page 6 of 10 -2 -.6 -.8 -1 -1.5 Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( Ic = 5 mA) ( Ic = 20 mA) 2SC5700 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.855 –16.3 15.67 165.4 0.018 81.2 0.962 –10.7 200 0.784 –32.7 14.42 152.1 0.035 72.2 0.889 –20.9 300 0.703 –48.4 12.92 140.6 0.048 65.3 0.791 –28.9 400 0.616 –60.4 11.41 131.2 0.059 61.2 0.698 –34.6 500 0.540 –72.1 10.09 123.5 0.067 58.6 0.618 –38.2 600 0.475 –81.4 8.94 117.2 0.074 57.3 0.549 –40.7 700 0.428 –90.3 8.00 112.3 0.080 56.6 0.492 –42.1 800 0.385 –99.1 7.23 108.2 0.085 56.1 0.445 –42.5 900 0.348 –106.5 6.54 104.2 0.091 56.3 0.404 –42.7 1000 0.320 –113.6 6.00 100.9 0.096 57.3 0.373 –42.0 1100 0.297 –121.6 5.51 98.2 0.101 57.4 0.344 –41.6 1200 0.283 –128.8 5.14 95.4 0.106 57.8 0.321 –40.7 1300 0.271 –134.6 4.80 93.1 0.111 58.7 0.298 –39.1 1400 0.262 –142.4 4.47 90.8 0.117 59.2 0.283 –37.5 1500 0.254 –149.0 4.23 89.0 0.122 60.0 0.263 –36.3 1600 0.246 –155.3 3.99 87.0 0.128 60.5 0.252 –34.6 1700 0.248 –160.8 3.79 85.3 0.134 61.1 0.238 –33.0 1800 0.249 –167.3 3.59 83.7 0.140 61.5 0.226 –31.3 1900 0.253 –172.0 3.44 81.9 0.145 62.1 0.215 –29.6 2000 0.253 –177.5 3.29 80.5 0.151 62.7 0.204 –27.2 Rev.0, Jun. 2001, page 7 of 10 2SC5700 (VCE = 1 V, IC = 20 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.526 –43.0 37.91 148.3 0.015 75.0 0.817 –25.2 200 0.406 –76.6 27.98 127.5 0.025 67.3 0.605 –40.0 300 0.334 –100.0 20.76 115.3 0.033 66.9 0.453 –45.9 400 0.284 –116.6 16.30 108.1 0.040 68.0 0.360 –47.1 500 0.263 –131.4 13.33 103.0 0.047 69.8 0.300 –46.2 600 0.243 –143.4 11.24 99.2 0.055 71.1 0.257 –44.4 700 0.242 –152.6 9.74 96.3 0.063 72.0 0.226 –41.4 800 0.236 –159.6 8.57 93.6 0.071 72.7 0.203 –38.2 900 0.230 –167.8 7.62 91.4 0.078 73.5 0.184 –34.3 1000 0.239 –173.4 6.91 89.4 0.086 74.1 0.170 –30.5 1100 0.240 –179.4 6.31 87.7 0.094 73.9 0.160 –26.8 1200 0.247 175.6 5.82 85.9 0.102 74.1 0.150 –22.6 1300 0.246 172.4 5.38 84.4 0.110 74.4 0.143 –18.1 1400 0.255 167.4 5.02 82.9 0.117 74.3 0.138 –14.0 1500 0.257 163.8 4.71 81.3 0.126 74.2 0.133 –9.6 1600 0.265 160.2 4.45 80.1 0.134 74.4 0.130 –5.3 1700 0.268 158.7 4.19 78.9 0.142 74.2 0.128 –1.2 1800 0.282 154.1 3.97 77.6 0.149 73.9 0.125 2.5 1900 0.283 152.7 3.80 76.4 0.157 74.1 0.123 7.1 2000 0.300 150.3 3.63 75.4 0.165 73.7 0.123 11.8 Rev.0, Jun. 2001, page 8 of 10 2SC5700 Package Dimensions As of January, 2001 0.15 +0.1 −0.05 (0.1) 3-0.2 +0.1 −0.05 0.45 0.45 (0.1) 0.2 0.8 ± 0.1 1.4 ± 0.05 0.9 ± 0.1 0.6 MAX 1.2 ± 0.05 0.2 Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) MFPAK 0.0016 g Rev.0, Jun. 2001, page 9 of 10 2SC5700 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, Jun. 2001, page 10 of 10