2SC5852 Silicon NPN Epitaxial Planar ADE-208-1481 (Z) Rev.0 Feb. 2002 Features • VHF amplifier, local oscillator Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5852 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4 V Collector current IC 20 mA Collector power dissipation PC* 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 V IE = 10 µA, IC = 0 Collector cutoff current ICEO 0.5 µA VCE = 10 V, RBE = ∞ Emitter cutoff current IEBO 0.5 µA VEB = 2 V, IC =0 DC current transfer ratio hFE* 60 200 VCE = 6 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) 0.17 V IC = 20 mA, IB = 4 mA Base to emitter voltage VBE 0.72 V VCE = 6 V, IC = 1 mA Gain bandwidth product fT 940 MHz VCE = 6V, IC = 5 mA Collector output capacitance Cob 0.9 pF VCB = 10 V, IE = 0, f = 1 MHz 1 Notes: 1. The 2SC5852 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Rev.0 Feb. 2002 page 2 of 6 Collector Power Dissipation PC * (mW) 2SC5852 Maximum Collector Dissipation Curve Typical Output Characteristics 150 20 I C (mA) 0 Collector Current 100 50 100 50 Ambient Temperature 5 12 150 8 h FE DC Current Transfer Ratio 20 10 µA 1 IB = 0 0 4 8 12 Collector to Emitter Voltage 16 0m W 25 µA 4 8 12 16 20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 120 30 2 15 50 4 Ta (°C) 40 3 C = 75 0 Typical Output Characteristics 4 P 100 IB = 0 50 IC (mA) 16 275 250 225 200 175 150 125 * Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 0 Collector Current 30 20 VCE (V) 100 VCE = 6 V Pulse test 80 60 40 20 0 0.1 0.2 0.5 1.0 2 Collector Current 5 10 20 IC (mA) Rev.0 Feb. 2002 page 3 of 6 2SC5852 Typical Transfer Characteristics (1) Typical Transfer Characteristics (2) 5 VCE = 6 V VCE = 6 V Pulse test 16 IC (mA) IC (mA) 20 3 Collector Current Collector Current 12 4 8 4 0 0.6 0.7 2 1 0 0.6 0.8 Base to Emitter Voltage VBE (V) 0.8 VBE (V) Gain Bandwidth Product vs. Collector Current 1,000 fT (MHz) 1.5 f = 1 MHz IE = 0 1.3 Gain Bandwidth Product Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 0.7 Base to Emitter Voltage 1.1 0.9 0.7 0.5 0.3 1.0 3 10 Collector to Base Voltage VCB (V) Rev.0 Feb. 2002 page 4 of 6 30 VCE = 6 V 800 600 400 200 0 0.1 0.2 0.5 1.0 Collector Current 2 5 10 IC (mA) 20 2SC5852 Package Dimensions As of July, 2001 0.1 0.3 +– 0.05 0.2 0.65 0.65 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) CMPAK — Conforms 0.006 g Rev.0 Feb. 2002 page 5 of 6 2SC5852 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0 Feb. 2002 page 6 of 6