2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 Note: Marking is “ZS-”. 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5545 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation Pc 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 15 — — V I C = 10µA , IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 12V , IE = 0 Collector cutoff current I CEO — — 1 mA VCE = 6V , RBE = Åá Emitter cutoff current I EBO — — 10 µA VEB = 1.5V , IC = 0 DC current transfer ratio hFE 80 120 160 V VCE = 3V , IC = 20mA Collector output capacitance Cob — 0.69 1.1 pF VCB = 3V , IE = 0 f = 1MHz Gain bandwidth product fT 10 12.6 — GHz VCE = 3V , IC = 20mA Power gain PG 14 16 — dB VCE = 3V, IC = 20mA f = 900MHz Noise figure NF — 1.1 2.0 dB VCE = 3V, IC = 5mA f = 900MHz 2 2SC5545 Main Characteristics DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve 200 hFE DC Current Transfer Ratio 150 100 50 (pF) 100 0 50 0 100 150 Ambient Temperature 200 1 10 20 50 100 IC (mA) Gain Bandwidth Product vs. Collector Current 20 IE = 0 f = 1MHz 1.6 5 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 2.0 2 VCE = 3 V 16 12 1.2 0.8 0.4 0 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 VCB (V) 10 Gain Bandwidth Product Collector Output Capacitance fT Cob VCE = 3 V (GHz) Collector Power Dissipation Pc (mW) 200 8 4 0 1 2 5 10 Collector Current 20 50 100 IC (mA) 3 2SC5545 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 3 V NF (dB) 12 Noise Figure Power Gain PG (dB) 16 8 4 VCE = 3 V f = 900MHz 4 3 2 1 f = 900MHz 0 1 0 2 5 10 Collector Current 20 IC 50 100 f = 1GHz S 21 parameter |S 21| 2 (dB) VCE = 3 V 16 12 8 4 0 1 2 5 10 20 50 Collector Current I C (mA) 4 2 5 10 Collector Current (mA) S 21 Parameter vs. Collector Current 20 1 100 20 50 I C (mA) 100 2SC5545 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 10 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Condition : V CE = 3 V , I C = 20 mA Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.04 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) –2 –.6 –.8 –1 –1.5 Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 5 2SC5545 Sparameter (VCE = 3V, IC = 20mA, Zo = 50Ω) S11 f (MHz) MAG S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG 100 0.567 –60.8 34.04 146.8 0.0207 67.3 0.817 –37.3 200 0.539 –102.7 24.61 125.5 0.0329 54.3 0.605 –63.5 300 0.528 –128.1 18.16 113.2 0.0399 50.6 0.463 –80.5 400 0.525 –143.2 14.26 105.5 0.0447 50.3 0.379 –92.4 500 0.518 –153.6 11.65 100.2 0.0495 51.6 0.327 –101.8 600 0.526 –161.2 9.82 96.4 0.0545 53.3 0.293 –109.6 700 0.526 –167.9 8.48 92.9 0.0594 54.8 0.269 –116.2 800 0.528 –172.8 7.46 90.0 0.0639 56.1 0.253 –121.9 900 0.532 –178.3 6.63 87.4 0.0698 57.7 0.242 –127.0 1000 0.535 178.2 6.00 85.1 0.0741 58.7 0.235 –131.2 1100 0.536 174.2 5.48 82.9 0.0801 59.5 0.229 –135.1 1200 0.549 170.6 5.04 81.0 0.0851 60.6 0.225 –139.1 1300 0.546 167.6 4.67 79.1 0.0901 60.9 0.223 –142.0 1400 0.547 165.4 4.34 77.4 0.0961 61.5 0.222 –144.7 1500 0.552 162.4 4.09 75.7 0.102 62.1 0.222 –147.2 1600 0.562 159.4 3.82 74.0 0.106 62.3 0.223 –149.7 1700 0.561 157.3 3.62 72.5 0.113 62.5 0.224 –152.3 1800 0.563 154.8 3.43 70.7 0.118 62.9 0.227 –154.3 1900 0.573 152.5 3.26 69.2 0.124 62.3 0.229 –155.8 2000 0.577 150.0 3.13 67.8 0.130 63.0 0.232 –157.6 6 2SC5545 Package Dimensions Unit: mm + 0.3 2.8 – 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 3 0.65 – 0.3 + 0.1 + 0.1 1.9 0.95 0.95 + 0.1 0.16 – 0.06 + 0.2 2.8 – 0.6 1.5 2 0 – 0.1 0.95 0.85 0.65– 0.3 + 0.1 0.6 – 0.05 + 0.1 1 4 + 0.1 0.4 – 0.05 + 0.2 1.1– 0.1 0.3 1.8 Hitachi Code EIAJ JEDEC MPAK–4 SC–61AA — 7 2SC5545 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 8