2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier ADE-208-1397D(Z) Rev.4 Jul. 2001 Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 Note: Marking is “WF–“. 1. Emitter 2. Base 3. Collector 2SC5758 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 1.5 V Collector current IC 80 mA Collector power dissipation PC 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –50 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 10 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 600 nA VCB = 10 V, IE = 0 Collector cutoff current ICEO 200 nA VCE = 3.5 V, RBE = Infinite Emitter cutoff current IEBO 100 nA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 80 100 130 V VCB = 1 V, IC = 5 mA Collector output capacitance Cob 0.65 0.95 1.25 pF VCB = 1 V, IE = 0, f = 1 MHz Gain bandwidth product fT 6 8 GHz VCE = 1 V, IC = 5 mA Power gain PG 10 13 dB VCE = 1 V, IC = 5 mA, f = 900 MHz Noise figure NF 1.0 2.0 dB VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 2SC5758 Typical Output Characteristics Collector Power Dissipation Curve 50 IC (mA) 80 60 Collector Current Collector Power Dissipation Pc (mW) 100 40 20 0 50 100 150 Ambient Temperature 200 500 µA 450 µA 400 µA 350 40 30 250 µA 100 µA 10 IB = 50 µA 0.5 1 1.5 2 2.5 Collector to Emitter Voltage 3 3.5 VCE (V) DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V hFE VCE = 1 V 40 DC Current Transfer Ratio IC (mA) µA 150 µA 20 Ta (°C) 50 Collector Current 300 A 200 µ 0 Typical Transfer Characteristics 30 20 10 0 µA 0.2 0.4 0.6 Base to Emitter Voltage 0.8 VBE (V) 1 100 0 1 2 5 10 Collector Current 20 50 100 I C (mA) Rev.4, Jul. 2001, page 3 of 10 2SC5758 Gain Bandwidth Product vs. Collector Current 20 fT (GHz) 2.0 IE = 0 f = 1 MHz 1.6 Gain Bandwidth Product Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.2 0.8 0.4 0 0.4 0.8 1.6 1.2 Collector to Base Voltage VCE = 1 V f =2 GHz 16 12 8 4 0 1 2.0 S21 Parameter vs. Collector Current 10 20 50 100 IC (mA) Power Gain vs. Collector Current 20 VCE = 1 V f = 2 GHz PG (dB) 16 VCE = 1 V f = 900 MHz 12 Power Gain | S21 |2 (dB) 5 Collector Current VCB (V) 20 S21 Parameter 2 8 4 16 12 8 4 0 0 1 2 5 10 Collector Current Rev.4, Jul. 2001, page 4 of 10 20 50 IC (mA) 100 1 2 5 10 Collector Current 20 50 IC (mA) 100 2SC5758 Noise Figure vs. Collector Current 5 Noise Figure NF (dB) VCE = 1 V f = 900 MHz 4 3 2 1 0 1 2 5 10 Collector Current 20 50 IC (mA) 100 Rev.4, Jul. 2001, page 5 of 10 2SC5758 S21 Parameter vs. Frequency Scale: 8 / div. 90° S11 Parameter vs. Frequency .8 1 .6 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90° S22 Parameter vs. Frequency .8 60° 120° -60° -120° -1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Rev.4, Jul. 2001, page 6 of 10 -2 -.6 -.8 -1 -1.5 Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) 2SC5758 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 S21 S12 S22 f(MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.806 –31.9 14.60 157.6 0.038 72.8 0.901 –24.3 200 0.713 –61.5 12.31 138.9 0.067 59.5 0.757 –44.8 300 0.635 –85.3 10.02 125.3 0.085 51.3 0.610 –60.1 400 0.560 –102.7 8.22 115.4 0.096 47.2 0.501 –70.9 500 0.529 –117.1 6.94 108.4 0.104 45.5 0.421 –79.8 600 0.500 –127.8 5.97 103.1 0.111 44.6 0.360 –87.2 700 0.486 –137.2 5.20 98.6 0.117 44.8 0.314 –93.1 800 0.474 –144.1 4.65 94.6 0.123 45.7 0.278 –99.7 900 0.467 –151.1 4.14 91.7 0.129 46.7 0.249 –105.1 1000 0.466 –157.1 3.77 88.4 0.135 47.7 0.226 –110.9 1100 0.461 –162.4 3.45 85.9 0.141 48.6 0.208 –116.0 1200 0.464 –166.1 3.19 83.4 0.147 49.7 0.194 –121.4 1300 0.464 –169.9 2.99 81.3 0.153 51.0 0.181 –127.1 1400 0.467 –173.8 2.78 79.1 0.159 51.8 0.172 –131.7 1500 0.465 –177.2 2.62 77.3 0.166 53.0 0.165 –137.5 1600 0.476 179.9 2.46 75.2 0.174 53.8 0.159 –141.6 1700 0.480 177.4 2.36 73.4 0.180 54.7 0.155 –147.4 1800 0.480 173.4 2.24 71.8 0.187 55.6 0.154 –152.9 1900 0.490 172.0 2.14 70.2 0.195 56.5 0.154 –157.6 2000 0.487 169.3 2.06 68.6 0.202 57.0 0.153 –162.5 Rev.4, Jul. 2001, page 7 of 10 2SC5758 (VCE = 1 V, IC = 20 mA, ZO =50 Ω) S11 S21 S12 S22 f(MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.487 –78.2 31.25 138.4 0.026 64.0 0.679 –53.9 200 0.466 –120.9 20.22 117.0 0.040 57.9 0.469 –87.5 300 0.465 –141.6 14.16 106.4 0.050 58.9 0.362 –109.1 400 0.459 –154.5 10.81 100.4 0.060 61.5 0.311 –124.4 500 0.461 –161.8 8.74 96.1 0.070 63.7 0.283 –135.8 600 0.462 –168.1 7.34 92.9 0.080 65.8 0.268 –145.4 700 0.468 –172.8 6.30 90.2 0.091 67.1 0.258 –153.2 800 0.468 –176.5 5.56 87.7 0.101 68.3 0.253 –159.6 900 0.474 179.1 4.93 85.7 0.113 69.0 0.249 –165.5 1000 0.473 176.8 4.46 83.7 0.124 69.5 0.249 –170.7 1100 0.478 173.5 4.07 82.2 0.135 69.8 0.249 –175.1 1200 0.486 170.7 3.75 80.3 0.145 70.2 0.251 –179.3 1300 0.477 168.8 3.51 78.8 0.156 70.2 0.251 176.9 1400 0.493 166.3 3.26 77.2 0.167 70.1 0.254 173.5 1500 0.493 163.6 3.07 75.9 0.179 70.4 0.256 170.4 1600 0.502 161.7 2.88 74.5 0.189 70.4 0.260 167.6 1700 0.506 160.8 2.74 73.2 0.201 70.2 0.263 164.8 1800 0.511 157.7 2.62 72.0 0.211 69.8 0.268 162.1 1900 0.517 156.4 2.49 70.7 0.222 69.9 0.275 159.6 2000 0.523 154.5 2.40 69.5 0.232 69.4 0.280 157.1 Rev.4, Jul. 2001, page 8 of 10 2SC5758 Package Dimensions As of January, 2001 0.15 +0.1 −0.05 (0.1) 3-0.2 +0.1 −0.05 0.45 0.45 (0.1) 0.2 0.8 ± 0.1 1.4 ± 0.05 0.9 ± 0.1 0.6 MAX 1.2 ± 0.05 0.2 Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) MFPAK 0.0016 g Rev.4, Jul. 2001, page 9 of 10 2SC5758 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.4, Jul. 2001, page 10 of 10 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.