HTT1115E Silicon NPN Epitaxial Twin Transistor ADE-208-1439A (Z) Rev.1 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700 2SC5757 Outline EMFPAK-6 Pin Arrangement 6 5 B1 6 4 2 3 C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 Mark is “F”. B2 4 Q2 Q1 1 Note: E2 5 E1 2 C2 3 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1115E Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 15 10 V Collector to emitter voltage VCEO 4 3.5 V Emitter to base voltage VEBO 1.5 1.5 V Collector current IC 50 80 mA Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Total 200* mW 150 150 °C –55 to +150 –50 to +150 °C *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Electrical Characteristics (Q1) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown V(BR)CBO voltage 15 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 1 µA VCE = 4 V, RBE = infinite Emitter cutoff current IEBO 0.2 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 100 130 170 VCE = 1 V, IC = 5 mA 0.3 0.45 pF VCB = 1 V, f = 1 MHz Emitter ground 10 12 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz 13 16 dB 1.0 2.0 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Reverse transfer capacitance Cre Gain bandwidth product fT Forward transfer coefficient |S21| Noise figure NF Rev.1, Aug. 2001, page 2 of 10 2 HTT1115E Electrical Characteristics (Q2) (Ta = 25°C) Item Min Typ Max Unit Test Condition Collector to base breakdown V(BR)CBO voltage 10 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.6 µA VCB = 10 V, IE = 0 Collector cutoff current ICEO 0.2 µA VCE = 3.5 V, RBE = infinite Emitter cutoff current IEBO 0.1 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 80 100 130 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.8 1.1 pF VCB = 1 V, f = 1 MHz Emitter ground 4 6 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz 7 10 dB 1.5 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω Gain bandwidth product Symbol fT Forward transfer coefficient |S21| Noise figure NF 2 Rev.1,Aug. 2001, page 3 of 10 HTT1115E Main Characteristics (Q1) Typical Output Characteristics 450 µA 400 µA Typical Forward Transfer Characteristics 50 50 0µ 300 µA 250 µA 30 200 µA 150 µA 20 100 µA IB = 50 µA 10 0 1 2 3 Collector to Emitter Voltage 4 30 20 10 0 VCE (V) VCE = 1 V 100 0 1 2 5 10 Collector Current Rev.1, Aug. 2001, page 4 of 10 20 50 IC (mA) 100 VCE = 1 V 40 0.2 0.4 0.6 Base to Emitter Voltage DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio hFE Collector Current IC (mA) 40 350 µA Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) A 50 0.5 1.0 0.8 VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0.4 0.3 0.2 0.1 0 0.4 0.8 1.2 Collector to Base Voltage 1.6 2.0 VCB (V) HTT1115E Gain Bandwidth Product vs. Collector Current f = 1 GHz S21 Parameter vs. Collector Current 20 VCE = 2 V 16 (dB) 16 12 |S21|2 VCE = 2 V 12 S21 Parameter Gain Bandwidth Product fT (GHz) 20 8 4 VCE = 1 V 8 VCE = 1V 4 f = 900 MHz 0 0 1 2 5 10 20 Collector Current 50 100 1 2 5 10 Collector Current IC (mA) 20 50 100 IC (mA) Noise Figure vs. Collector Current Noise Figure NF (dB) 5 f = 900 MHz 4 VCE = 1 V 3 2 VCE = 2 V 1 0 1 2 5 10 Collector Current 20 50 100 IC (mA) Rev.1,Aug. 2001, page 5 of 10 HTT1115E 40 Typical Output Characteristics µA 450 µA µA 400 350 µA 300 Typical Forward Transfer Characteristics 50 Collector Current Ic (mA) Collector Current IC (mA) 50 500 µA Main Characteristics (Q2) A 50 µ 2 200 µ 30 A 150 µA 20 100 µA IB = 50 µA 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE = 1 V 40 30 20 10 0 0.2 Collector to Emitter Voltage VCE (V) Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE 100 0 2 5 10 20 50 Collector Current IC (mA) Rev.1, Aug. 2001, page 6 of 10 0.8 1.0 Reverse Transfer Capacitance vs. Collector to Base Voltage VCE = 1 V 1 0.6 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 200 0.4 100 1.6 IE = 0 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0 0.4 0.8 1.2 1.6 Collector to Base Voltage VCB (V) 2.0 HTT1115E Gain Bandwidth Product vs. Collector Current S21 Parameter vs. Collector Current 20 f = 1 GHz 16 VCE = 2 V 12 VCE = 1 V |S21|2 (dB) f = 900 MHz S21 Parameter Gain Bandwidth Product fT (GHz) 20 8 4 16 VCE = 2V 12 VCE = 1V 8 4 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Noise Figure vs. Collector Current Noise Figure NF (dB) 5 f = 900 MHz 4 3 VCE = 1 V 2 VCE = 2 V 1 0 1 2 5 10 Collector Current 20 50 100 IC (mA) Rev.1,Aug. 2001, page 7 of 10 HTT1115E Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 200 *: Value on PCB. (FR–4 (13 x13 x0.635 mm)) 2 devices total 150 100 50 0 50 100 Ambient temperature Rev.1, Aug. 2001, page 8 of 10 150 Ta (°C) 200 HTT1115E Package Dimensions + 0.1 6 – 0.15 – 0.05 0.8 ± 0.1 1.0 ± 0.05 (0.1) 1.2 ± 0.05 0.2 ± 0.1 Unit: mm 0.2 ± 0.1 (0.4) (0.4) 0.5MAX (0.1) + 0.1 0.15 – 0.05 Hitachi Code JEDEC EIAJ Mass (reference value) EMFPAK-6 — Conforms 1.2 mg Rev.1,Aug. 2001, page 9 of 10 HTT1115E Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Aug. 2001, page 10 of 10