HITACHI 2SC5849

2SC5849
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1469 (Z)
Rev. 0
Nov. 2001
Features
• Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
3
1
2
Note: Marking is “WY–“.
1. Emitter
2. Base
3. Collector
2SC5849
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
6.0
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
80
mA
Collector power dissipation
PC
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to 150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15


V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO


0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO


0.1
µA
VCE = 6.0 V, RBE = Infinite
Emitter cutoff current
IEBO


0.1
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
90
110
140

VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre

0.5

pF
VCE = 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance
Cob

0.85
1.15
pF
VCB = 1 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT(1)
1.0
4.0

GHz
VCE = 1 V, IC = 5 mA
Gain bandwidth product
fT(2)

9.0

GHz
VCE = 1 V, IC = 30 mA
Power gain
PG
10
13

dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF

1.1
1.8
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10
2SC5849
Collector Power Dissipation Curve
Typical Output Characteristics
20
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
100
80
60
40
20
0
50
100
150
200
250
120 µA
100 µA
12
80 µA
8
60 µA
40 µA
4
IB = 20 µA
1
2
3
4
5
6
Ambient Temperature Ta (˚C)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
20
15
10
5
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
VCE = 1 V
hFE
VCE = 1 V
DC Current Transfer Ratio
IC (mA)
Collector Current
140 µA
16
0
25
0
160 µA
180 µA
100
0
0.1
1.0
10
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 3 of 10
2.0
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
Collector to Base Voltage
2.5
3.0
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
2SC5849
|S21|2 (dB)
12
8
4
20
50
Collector Current IC (mA)
Rev.0, Nov. 2001, page 4 of 10
0.6
0.4
0.2
100
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage VCB (V)
S21 Parameter
fT (GHz)
Gain Bandwidth Product
16
10
0.8
20
VCE = 1 V
f = 1 GHz
5
Emitter ground
f = 1 MHz
VCB (V)
20
2
1.0
0
Gain Bandwidth Product vs.
Collector Current
0
1
Reverse Transfer Capacitance vs.
Collector to Base Voltage
S21 Parameter vs. Collector Current
VCE = 1 V
f = 1 GHz
16
12
8
4
0
1
2
5
10
20
50
Collector Current IC (mA)
100
2SC5849
Noise Figure vs. Collector Current
Power Gain vs. Collector Current
5
NF (dB)
16
VCE = 1 V
f = 900 MHz
12
Noise Figure
Power Gain
PG (dB)
20
8
4
0
1
2
5
10
20
50
Collector Current IC (mA)
100
4
VCE = 1 V
f = 900 MHz
3
2
1
0
1
2
5
10
20
50
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 5 of 10
2SC5849
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
1
90°
.8
1.5
.6
Scale: 8 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
180°
0°
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–.6
–.8
–120°
–1.5
–60°
–1
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
1
1.5
.6
60°
120°
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–120°
–60°
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Rev.0, Nov. 2001, page 6 of 10
–.6
–.8
–1.5
–1
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
2SC5849
S Parameter
(VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.807
–40.6
14.95
154.2
0.030
69.3
0.913
–19.1
200
0.737
–73.7
12.30
135.0
0.049
55.5
0.768
–31.8
300
0.675
–98.4
9.86
121.2
0.061
47.8
0.633
–38.8
400
0.642
–115.9
8.03
111.9
0.067
44.0
0.544
–42.3
500
0.624
–127.9
6.72
105.0
0.071
42.8
0.484
–44.4
600
0.611
–138.1
5.75
99.4
0.074
43.2
0.442
–45.2
700
0.604
–145.4
5.02
95.0
0.078
43.8
0.412
–46.0
800
0.599
–151.6
4.45
90.9
0.081
45.4
0.390
–46.7
900
0.595
–157.2
3.98
87.6
0.084
47.2
0.373
–47.6
1000
0.594
–161.2
3.62
84.5
0.087
49.3
0.362
–48.4
1100
0.591
–165.5
3.33
81.8
0.091
51.3
0.354
–49.5
1200
0.592
–168.4
3.06
79.0
0.095
53.6
0.347
–50.7
1300
0.591
–171.5
2.86
76.4
0.099
55.3
0.341
–52.0
1400
0.592
–174.8
2.66
74.1
0.103
57.2
0.340
–53.5
1500
0.592
–176.8
2.51
72.0
0.108
59.1
0.335
–54.8
1600
0.589
–180.0
2.35
69.7
0.113
61.1
0.337
–56.3
1700
0.594
177.7
2.23
67.8
0.119
62.8
0.334
–58.3
1800
0.594
175.7
2.13
65.7
0.126
64.7
0.335
–60.0
1900
0.596
173.9
2.03
63.7
0.132
65.7
0.335
–62.0
2000
0.598
171.3
1.94
61.9
0.139
66.9
0.335
–64.0
Rev.0, Nov. 2001, page 7 of 10
2SC5849
(VCE = 1 V, IC = 20 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.504
–90.3
33.79
132.5
0.021
61.4
0.674
–44.5
200
0.490
–128.6
21.25
112.9
0.030
57.6
0.431
–61.0
300
0.488
–146.2
14.78
103.3
0.037
60.2
0.309
–67.9
400
0.487
–156.3
11.31
97.4
0.045
63.7
0.247
–71.1
500
0.492
–162.8
9.13
93.3
0.053
66.0
0.210
–73.2
600
0.492
–167.0
7.65
90.0
0.062
68.0
0.187
–75.1
700
0.497
–170.8
6.58
87.2
0.070
69.6
0.171
–76.7
800
0.492
–174.1
5.78
84.4
0.079
70.4
0.160
–78.2
900
0.496
–177.0
5.13
82.6
0.088
71.2
0.152
–79.9
1000
0.498
–178.4
4.65
80.2
0.097
71.7
0.147
–81.4
1100
0.500
178.2
4.24
78.3
0.106
72.0
0.145
–83.2
1200
0.503
177.5
3.90
76.1
0.116
72.4
0.143
–85.1
1300
0.503
175.2
3.63
74.3
0.123
72.1
0.143
–87.2
1400
0.506
173.7
3.38
72.6
0.132
72.4
0.144
–88.8
1500
0.503
172.0
3.17
70.9
0.141
72.3
0.144
–91.2
1600
0.507
170.6
2.99
69.4
0.150
72.1
0.146
–92.8
1700
0.516
168.9
2.82
67.7
0.159
72.0
0.148
–95.0
1800
0.511
167.3
2.68
66.0
0.169
71.7
0.151
–97.0
1900
0.515
165.6
2.56
64.6
0.177
71.4
0.154
–99.0
2000
0.514
165.1
2.45
63.0
0.187
70.8
0.158
–100.8
Rev.0, Nov. 2001, page 8 of 10
2SC5849
Package Dimensions
As of July, 2001
0.15 +0.1
–0.05
(0.1)
3-0.2 +0.1
–0.05
0.45
0.45
(0.1)
0.2
0.8 ± 0.1
1.4 ± 0.05
0.9 ± 0.1
0.6 MAX
1.2 ± 0.05
0.2
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MFPAK
—
—
0.0016 g
Rev.0, Nov. 2001, page 9 of 10
2SC5849
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Nov. 2001, page 10 of 10