ETC MUN2211T1/D

MUN2211T1 Series
Preferred Devices
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59
package which is designed for low power surface mount applications.
•
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
The SC–59 package can be soldered using wave or reflow. The
modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 2
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 1
EMITTER
(GROUND)
3
2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
230 (Note 1.)
338 (Note 2.)
1.8 (Note 1.)
2.7 (Note 2.)
mW
Rating
Collector Current
Total Device Dissipation
TA = 25°C
Derate above 25°C
RθJA
540 (Note 1.)
370 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
264 (Note 1.)
287 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
8x = Specific Device Code
M = Date Code
DEVICE MARKING INFORMATION
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
March, 2001 – Rev. 7
8x M
°C/W
Thermal Resistance –
Junction-to-Ambient
 Semiconductor Components Industries, LLC, 2001
SC–59
CASE 318D
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
1
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MUN2211T1/D
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN2211T1
SC–59
8A
10
10
3000/Tape & Reel
MUN2212T1
SC–59
8B
22
22
3000/Tape & Reel
MUN2213T1
SC–59
8C
47
47
3000/Tape & Reel
MUN2214T1
SC–59
8D
10
47
3000/Tape & Reel
MUN2215T1 (Note 3.)
SC–59
8E
10
∞
3000/Tape & Reel
MUN2216T1 (Note 3.)
SC–59
8F
4.7
∞
3000/Tape & Reel
MUN2230T1 (Note 3.)
SC–59
8G
1.0
1.0
3000/Tape & Reel
MUN2231T1 (Note 3.)
SC–59
8H
2.2
2.2
3000/Tape & Reel
MUN2232T1 (Note 3.)
SC–59
8J
4.7
4.7
3000/Tape & Reel
MUN2233T1 (Note 3.)
SC–59
8K
4.7
47
3000/Tape & Reel
MUN2234T1 (Note 3.)
SC–59
8L
22
47
3000/Tape & Reel
MUN2236T1
SC–59
8N
100
100
3000/Tape & Reel
MUN2237T1
SC–59
8P
47
22
3000/Tape & Reel
MUN2240T1 (Note 3.)
SC–59
8T
47
∞
3000/Tape & Reel
MUN2241T1 (Note 3.)
SC–59
8U
100
∞
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
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2
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCE(sat)
–
–
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
ON CHARACTERISTICS (Note 4.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kΩ)
VOL
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
MUN2240T1
MUN2236T1
MUN2237T1
MUN2241T1
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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3
Vdc
Vdc
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
70
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
100
47
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
130
61.1
100
kΩ
R1/R2
0.8
1.0
1.2
0.17
–
0.21
–
0.25
–
0.8
0.055
0.38
1.7
1.0
0.1
0.47
2.1
1.2
0.185
0.56
2.6
ON CHARACTERISTICS (Note 5.) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
MUN2230T1
MUN2215T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN2216T1
MUN2233T1
MUN2240T1
Input Resistor
Resistor Ratio
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
MUN2214T1
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
MUN2237T1
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
–50
RθJA = 370°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
MUN2211T1 Series
1
1000
IC/IB = 10
VCE = 10 V
TA=-25°C
25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
0.1
0.01
VO = 5 V
0.001
50
TA=-25°C
10
0
Figure 4. Output Capacitance
10
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
TA=-25°C
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
MUN2211T1 Series
1000
1
IC/IB = 10
VCE = 10 V
TA=-25°C
TA=75°C
25°C
25°C
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2212T1
75°C
0.1
0.01
0.001
40
20
60
IC, COLLECTOR CURRENT (mA)
0
-25°C
100
10
80
1
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
0
0
10
20
30
40
25°C
TA=-25°C
10
1
0.1
0.01
0.001
50
75°C
VO = 5 V
0
2
4
6
8
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
10
TA=-25°C
10
75°C
25°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 11. Input Voltage versus Output Current
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6
50
MUN2211T1 Series
10
1000
TA=-25°C
IC/IB = 10
25°C
1
VCE = 10 V
hFE , DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2213T1
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
80
10
1
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0
25°C
75°C
TA=-25°C
10
1
0.1
0.01
0.2
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
100
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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MUN2211T1 Series
1
300
TA=-25°C
IC/IB = 10
25°C
0.1
75°C
0.01
TA=75°C
VCE = 10
250
hFE, DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2214T1
25°C
200
-25°C
150
100
50
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
0
80
2
1
4
6
Figure 17. VCE(sat) versus IC
100
75°C
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
TA=-25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
VO= 0.2 V
25°C
75°C
1
0.1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 21. Input Voltage versus Output Current
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8
50
MUN2211T1 Series
1000
1
VCE = 10 V
IC/IB = 10
TA = –25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2236T1
25°C
75°C
0.1
75°C
25°C
100
0.01
0
5
10
20
30
15
25
IC, COLLECTOR CURRENT (mA)
35
TA = –25°C
10
40
10
1
IC, COLLECTOR CURRENT (mA)
0.1
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
5
4.5
f = 1 MHz
lE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
75°C
TA = –25°C
10
25°C
1
VO = 5 V
0.1
0
5
10
15
20
25
30
35
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
0
Figure 24. Output Capacitance
5
10
15
20
25
30
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA = –25°C
75°C
10
1
0.1
0
5
35
40
Figure 25. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
15
25
10
20
IC, COLLECTOR CURRENT (mA)
30
Figure 26. Input Voltage versus Output Current
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9
35
MUN2211T1 Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2237T1
TA = –25°C
25°C
75°C
0.1
0.01
0
5
10
20
30
15
25
IC, COLLECTOR CURRENT (mA)
35
10
IC, COLLECTOR CURRENT (mA)
1
Figure 27. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
1.6
1.4
1.2
1
0.8
0.6
f = 1 MHz
lE = 0 V
TA = 25°C
75°C
TA = –25°C
10
25°C
1
0.1
0.01
VO = 5 V
0.001
0
5
10
15
20
25
30
35
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
Figure 29. Output Capacitance
0
2
4
6
8
10
12
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
75°C
10
1
0
5
14
16
Figure 30. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.8
0.2
0
100
Figure 28. DC Current Gain
2
0.4
25°C
10
1
40
TA = –25°C
100
15
25
10
20
30
IC, COLLECTOR CURRENT (mA)
35
Figure 31. Input Voltage versus Output Current
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10
40
MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 33. Open Collector Inverter:
Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
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MUN2211T1 Series
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.098-0.118
2.5-3.0
0.094
2.4
0.039
1.0
0.031
0.8
inches
mm
SC–59 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 338 milliwatts.
The power dissipation of the SC–59 is a function of the
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD =
PD = 150°C – 25°C = 338 milliwatts
370°C/W
The 370°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled
using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MUN2211T1 Series
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SC–59 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 35 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
150°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SPIKE"
SOAK"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
140°C
100°C
100°C
50°C
STEP 6 STEP 7
VENT COOLING
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 35. Typical Solder Heating Profile
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MUN2211T1 Series
PACKAGE DIMENSIONS
SC–59
CASE 318D–04
ISSUE F
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
B
1
D
G
J
C
H
K
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14
DIM
A
B
C
D
G
H
J
K
L
S
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.09
0.18
0.20
0.60
1.25
1.65
2.50
3.00
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0034 0.0070
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
MUN2211T1 Series
Notes
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15
MUN2211T1 Series
Thermal Clad is a registered trademark of the Bergquist Company
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MUN2211T1/D